Oxide Semiconductor Edge Oxidation for Reliability
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Solution Overview
Problem
Semiconductor devices using oxide semiconductors as channels face reliability issues due to oxygen vacancies and defects in insulating layers, leading to abnormal characteristics and fluctuations in performance during reliability tests.
Innovation Solution
A semiconductor device structure and manufacturing method involving an indium-containing oxide semiconductor layer with a gate electrode and insulating layer, where a conductive layer with an oxide portion is formed at its edge through N2O plasma treatment to enhance oxygen supply and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer with large amount of oxygen is used to supply oxygen to oxide semiconductor, then oxygen vacancies in oxide semiconductor are reduced, but the insulating layer contains many defects causing abnormal characteristics and reliability issues
Solution Approach 1:
The patent applies local quality by forming an oxide layer specifically at the edge portion of the conductive layer that contacts the oxide semiconductor. This localized oxide formation targets the specific region where oxygen supply is needed to prevent oxygen vacancies, without requiring the entire insulating layer to contain large amounts of oxygen. The oxide layer is formed only where it is most effective - at the interface edge - thus avoiding the defect problems associated with oxygen-rich insulating layers while still achieving the oxygen supply function.
Solution Approach 2:
The patent segments the oxygen supply function by separating it from the general insulating layer and concentrating it in a specific oxide layer at the conductive layer edge. Instead of using a throughout oxygen-rich insulating layer (which would cause defects), the oxygen supply function is segmented and localized to a specific region where it is most needed - the edge portion of the conductive layer in contact with the oxide semiconductor. This segmentation allows the insulating layer to maintain low defect density while still providing sufficient oxygen supply through the localized oxide layer.
2Manufacturing precision
If an insulating layer with less defects is used, then device characteristics are stable, but it is impossible to increase the oxygen contained in the insulating layer to sufficiently provide oxygen to oxide semiconductor
Solution Approach 1:
The patent resolves this contradiction by applying local quality - concentrating the oxygen supply function in a localized oxide layer at the conductive layer edge rather than distributing oxygen throughout the entire insulating layer. This allows the insulating layer to maintain low defect density (high manufacturing precision) while still providing sufficient oxygen quantity through the localized oxide region. The oxide layer serves as a concentrated oxygen reservoir exactly where oxygen is needed - at the oxide semiconductor interface.
3Reliability
If N2O plasma treatment is performed on conductive layer edge, then oxide portion is formed to supply oxygen and reduce oxygen vacancies, but additional process step is added
Solution Approach 1:
The patent applies preliminary action by performing N2O plasma treatment on the conductive layer edge to pre-form an oxide layer before the oxide semiconductor is fully formed or before device operation. This preliminary oxide formation ensures that oxygen is already in place at the critical interface region, preventing oxygen vacancies from forming in the first place. By performing this oxygen supply action in advance, the patent eliminates the need for subsequent oxygen annealing or repair processes, thus the additional process step actually reduces the total number of steps needed compared to conventional approaches.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the reliability of semiconductor devices by reducing oxygen vacancies and defects, stabilizing performance and preventing fluctuations in characteristics during reliability tests.
Implementation Method 1
forming an oxide portion of the first conductive layer at the edge of the first conductive layer by performing a N2O plasma treatment to the edge of the first conductive layer
Implementation Method 2
forming an oxide portion of the first conductive layer at the edge of the first conductive layer by performing a N2O plasma treatment
Data Source
AI summary
A semiconductor device comprising: an oxide semiconductor layer including indium; a gate electrode facing to the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a first conductive layer arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer; an oxide portion formed on the oxide semiconductor layer and at an edge of the first conductive layer, the oxide portion being a oxide of the first conductive layer.