Oxide Semiconductor Device Fabrication via Inversion
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Solution Overview
Problem
The traditional oxide semiconductor device fabrication process is complex and prone to voids or holes due to the deep space between the source and drain, which affects device performance, as the conductive material filling the space is not easily filled.
Innovation Solution
The process involves burying the source, drain, and first gate in a dielectric layer, with a first barrier layer partially overlapping them and including openings for the oxide semiconductor layer, which simplifies the fabrication and improves performance by reducing the aspect ratio of the openings, allowing easier filling of the oxide semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a multi-layer oxide semiconductor layer is formed with deep spaces between source and drain, then the device structure is achieved, but the conductive material filling is difficult and voids or holes are generated
Solution Approach 1:
The patent inverts the conventional fabrication sequence by forming the oxide semiconductor layer before creating the source and drain electrodes. This reversal transforms the deep filling problem into a shallow deposition problem, eliminating void formation while simplifying the overall process by removing the need for multi-layer oxide deposition and subsequent etching steps
2Reliability
If the space between source and drain is made deeper to accommodate the gate, then the gate can be positioned correctly, but the conductive material is not filled easily and voids are generated
Solution Approach 1:
The oxide semiconductor layer is deposited in advance before the source and drain are formed. This preliminary action allows the material to be deposited conformally over the entire surface, ensuring complete coverage and eliminating filling difficulties that would arise from attempting to fill deep spaces later in the process
Data Source
AI summary
Provided is an oxide semiconductor device. A source, a drain, and a first gate are buried in a first dielectric layer, and the first gate is located between the source and the drain. A first barrier layer is located on the first dielectric layer, partially overlaps the source and the drain and overlaps the first gate. The first barrier layer includes a first opening and a second opening respectively corresponds to the source and the drain. An oxide semiconductor layer covers the first barrier layer and fills in the first opening and the second opening. A second barrier layer is located on the oxide semiconductor layer. A second gate is located on the second barrier layer and overlaps with the source, the drain, and the first gate.