Oxide Semiconductor Transistor Structure for High On-State Current
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Solution Overview
Problem
Existing semiconductor devices using oxide semiconductors face challenges in achieving favorable electrical characteristics, high on-state current, high-speed operation, high integration, low power consumption, high reliability, and data retention even when power is stopped.
Innovation Solution
A semiconductor device is designed with a specific structure that includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and conductive layers. The oxide semiconductor layer has distinct regions with varying compositions and carbon concentrations, and the structure includes a gate insulating film and gate electrode layers. This configuration allows for the formation of oxygen vacancies and the diffusion of hydrogen, which reduces the resistance of certain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If oxide semiconductor is used as semiconductor thin film in transistor, then alternative material to silicon-based semiconductor is achieved, but favorable electrical characteristics and high on-state current are not achieved
Solution Approach 1:
The oxide semiconductor layer is divided into distinct regions with different carbon concentrations: a first region (source/drain) with higher carbon concentration for low resistance and high on-state current, and a second region (channel) with lower carbon concentration for favorable electrical characteristics. This local differentiation allows each region to optimize its function.
Solution Approach 2:
The carbon concentration parameter is varied across different regions of the oxide semiconductor layer. By controlling carbon concentration to be higher in source/drain regions and lower in channel region, the patent achieves both high on-state current (from low resistance source/drain) and favorable electrical characteristics (from pure channel).
2Power
If higher carbon concentration is added to oxide semiconductor layer, then resistance is reduced and on-state current increases, but electrical characteristics deteriorate
Solution Approach 1:
Carbon concentration is locally optimized: high carbon concentration in source/drain regions provides low resistance and high on-state current, while low carbon concentration in channel region maintains favorable electrical characteristics. This spatial differentiation resolves the contradiction between power and reliability.
Solution Approach 2:
The oxide semiconductor layer is segmented into functionally distinct regions based on carbon concentration: source/drain regions with high carbon for conductivity, and channel region with low carbon for electrical performance. This segmentation allows independent optimization of each function.
3Ease of manufacture
If oxide semiconductor transistor is formed with conventional structure, then manufacturing is achieved, but high-speed operation and low power consumption are not achieved
Solution Approach 1:
By changing the carbon concentration parameter across different regions, the patent achieves low resistance source/drain contacts that enable high-speed operation while maintaining manufacturability through standard semiconductor processing techniques for controlled doping.
4Ease of manufacture
If oxide semiconductor transistor is formed with conventional structure, then manufacturing is achieved, but high integration and low power consumption are not achieved
Solution Approach 1:
The localized high carbon concentration in source/drain regions reduces resistance without requiring overall device size increase, enabling higher integration density while maintaining manufacturability through region-specific property control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves favorable electrical characteristics, high on-state current, and is suitable for high-speed operation while being highly integrated, consuming low power, and maintaining data retention even without power supply.
Implementation Method 1
The first region and the second region include a region having a higher carbon concentration than the third region
Implementation Method 2
the diffusion of hydrogen, which reduces the resistance of certain regions
Data Source
AI summary
The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.