Oxide Semiconductor Gate Structure With Hydrogen Barrier Films
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Solution Overview
Problem
Semiconductor devices with oxide semiconductor layers face characteristic degradation due to hydrogen diffusion, leading to shifts in threshold voltage and off-characteristic deterioration, especially during manufacturing processes involving hydrogen-containing atmospheres.
Innovation Solution
The implementation of hydrogen barrier films, such as silicon nitride, alumina, titanium oxide, or chromium oxide films, surrounding the oxide semiconductor and gate insulating layers, interposed between insulating and gate electrode layers, to suppress hydrogen permeation and maintain oxygen concentration, thereby preventing characteristic degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hydrogen-containing atmosphere is used during manufacturing processes, then manufacturing efficiency is improved, but hydrogen diffuses into the oxide semiconductor layer causing threshold voltage shifts and off-characteristic deterioration
Solution Approach 1:
A hydrogen barrier film is introduced as an intermediary layer between the oxide semiconductor layer and the external environment. This barrier film selectively blocks hydrogen diffusion while allowing the manufacturing process to proceed with hydrogen-containing atmospheres, thus resolving the contradiction between manufacturing efficiency and device reliability
Solution Approach 2:
The hydrogen barrier film is formed in advance before hydrogen diffusion can occur. By preemptively establishing this protective layer, the patent prevents hydrogen from reaching the oxide semiconductor layer, thereby maintaining transistor characteristics while enabling efficient hydrogen-containing manufacturing processes
2Reliability
If hydrogen barrier films are added to suppress hydrogen diffusion, then transistor characteristic stability is improved, but device structure complexity increases
Solution Approach 1:
The hydrogen barrier film is applied locally only where hydrogen diffusion is problematic - specifically at interfaces and regions adjacent to the oxide semiconductor layer. This targeted approach provides necessary protection while minimizing the overall increase in device complexity
Solution Approach 2:
The patent employs composite material structures combining the oxide semiconductor layer with the hydrogen barrier film. By selecting barrier film materials with complementary properties (such as titanium oxide or silicon nitride), the solution achieves effective hydrogen blocking with minimal structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of hydrogen barrier films effectively suppresses hydrogen diffusion into the oxide semiconductor layer, preventing threshold voltage shifts and maintaining transistor performance, thus enhancing the reliability and stability of the semiconductor device.
Implementation Method 1
hydrogen diffusion, leading to shifts in threshold voltage and off-characteristic deterioration
Implementation Method 2
maintain oxygen concentration, thereby preventing characteristic degradation
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first insulating layer, a gate electrode layer provided on the first insulating layer, a second insulating layer provided on the gate electrode layer, an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer, and a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer.