Oxide Semiconductor Transistor Hydrogen Barrier Design
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving excellent electrical characteristics, stability, miniaturization, and high yield due to issues with hydrogen permeability and copper diffusion, which affect the reliability and integration density of transistors.
Innovation Solution
A semiconductor device design incorporating a silicon transistor and an oxide semiconductor transistor with low hydrogen permeability wiring and plugs, such as tantalum nitride, and insulators like aluminum oxide, to prevent hydrogen and copper diffusion, ensuring stable and reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional insulators and wirings are used in semiconductor devices, then manufacturing is easier and device structure is simpler, but hydrogen diffusion and copper diffusion occur which degrade electrical characteristics and reliability
Solution Approach 1:
A barrier insulator layer is introduced between the conventional insulator and the oxide semiconductor transistor. This barrier insulator acts as an intermediary that prevents hydrogen and copper diffusion while maintaining the overall device structure. The barrier insulator is positioned specifically where diffusion prevention is most critical, blocking harmful substances from reaching the oxide semiconductor transistor without requiring complete restructuring of the device.
Solution Approach 2:
The device employs a composite structure combining conventional insulators with a specialized barrier insulator layer. The barrier insulator has specific material properties (low hydrogen permeability, low copper permeability) that complement the conventional insulator. This composite approach allows the device to benefit from both the ease of manufacturing conventional materials and the protective properties of the barrier insulator, preventing degradation from hydrogen and copper diffusion.
2Productivity
If miniaturization is pursued to increase integration density, then device size is reduced, but hydrogen permeability and copper diffusion become more significant problems affecting yield and reliability
Solution Approach 1:
The barrier insulator serves as a protective intermediary specifically positioned to shield miniaturized oxide semiconductor transistors from hydrogen and copper diffusion. As devices are scaled down, the barrier insulator's selective placement ensures that even in compact configurations, the critical interfaces are protected from degradation, maintaining reliability despite reduced device dimensions and increased integration density.
Solution Approach 2:
Rather than uniformly protecting all device components, the barrier insulator is strategically positioned at specific locations where hydrogen and copper diffusion would have the most severe impact on electrical characteristics. This local quality approach allows miniaturization to proceed while providing targeted protection at critical interfaces, ensuring high yield and reliability in densely integrated devices without adding excessive overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides semiconductor devices with improved electrical characteristics, stability, and high yield by minimizing hydrogen and copper diffusion, enabling miniaturization and high integration density.
Implementation Method 1
hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator
Implementation Method 2
The first wiring has low hydrogen permeability
Data Source
AI summary
To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.