Oxide Semiconductor Transistor Hydrogen Barrier Layer
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Solution Overview
Problem
It is challenging to lower the resistance of an oxide semiconductor layer by diffusing hydrogen along its thickness direction and to control the distribution of hydrogen concentration in the plane direction, which affects the conductivity of regions in a transistor.
Innovation Solution
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer containing hydrogen, and oxidation treatment is conducted to desorb hydrogen from specific regions, creating areas with different conductivities for the channel, source, and drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen is diffused into the oxide semiconductor layer from the source electrode and drain electrode, then the electric resistance of the oxide semiconductor is reduced, but the hydrogen concentration distribution in the plane direction becomes uncontrollable and varies depending on electrode shapes
Solution Approach 1:
A hydrogen barrier layer is introduced as an intermediary between the source/drain electrodes and the oxide semiconductor layer. This barrier layer selectively controls hydrogen diffusion, allowing hydrogen to reach specific regions of the oxide semiconductor while blocking other areas. The barrier layer acts as a mediator that decouples the hydrogen supply from the electrode shapes, enabling precise control over hydrogen concentration distribution independent of electrode geometry.
Solution Approach 2:
The hydrogen barrier layer is selectively removed or patterned to create local variations in hydrogen permeability. By applying the barrier layer only to specific regions or creating openings in it, the invention achieves local control over hydrogen diffusion into the oxide semiconductor layer. This allows different regions to have different hydrogen concentrations, enabling precise control of conductivity distribution in source, drain, and channel regions.
2Reliability
If hydrogen is diffused along the thickness direction of the oxide semiconductor, then resistance reduction is achieved, but it is difficult to control the hydrogen distribution and achieve uniform conductivity in source and drain regions
Solution Approach 1:
The hydrogen barrier layer is selectively applied or removed in specific patterns to control hydrogen diffusion locally. By creating regions with and without the barrier layer, the invention achieves different hydrogen concentrations in different areas of the oxide semiconductor layer. This local control enables uniform conductivity in source and drain regions while maintaining the desired resistance reduction through controlled hydrogen diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of regions with varying conductivities in the oxide semiconductor layer, reducing variations between source and drain regions and enabling precise control over the conductivity distribution, thereby improving transistor performance.
Implementation Method 1
hydrogen included in the source electrode and the drain electrode is diffused into an oxide semiconductor
Implementation Method 2
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen
Implementation Method 3
oxidation treatment is conducted to desorb hydrogen from specific regions
Implementation Method 4
hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment
Data Source
AI summary
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.