Oxide Semiconductor Hydrogen Blocking Layer Design
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Solution Overview
Problem
The challenge in producing semiconductor devices with oxide semiconductor materials is the ease of damage to the oxide semiconductor layer during the production process, affecting the performance of the final product due to oxidation and hydrogen diffusion.
Innovation Solution
A semiconductor device design incorporating a metal-oxide-semiconductor transistor, plugs with hydrogen blocking layers of hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, aluminum oxide, lanthanum oxide, or hafnium zirconium oxide on the sidewalls, which prevents hydrogen out-diffusion and mist from affecting the oxide semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor material is used in semiconductor device, then semiconductor properties can be utilized, but the oxide semiconductor layer is easily damaged during production process due to oxidation and hydrogen diffusion
Solution Approach 1:
A hydrogen blocking layer comprising metal oxide (such as hafnium oxide, aluminum oxide, or silicon oxide) is introduced as an intermediary protective barrier between the oxide semiconductor layer and the plug structure. This blocking layer prevents hydrogen diffusion from the plug into the oxide semiconductor layer, thereby protecting the semiconductor layer from damage while allowing the device to utilize the beneficial semiconductor properties of oxide materials
Solution Approach 2:
The hydrogen blocking layer creates a protective environment around the oxide semiconductor layer by blocking hydrogen diffusion pathways. The metal oxide material forms an inert barrier that prevents harmful hydrogen atoms from reaching and damaging the oxide semiconductor layer during device operation and subsequent processing steps
2Object-affected harmful factors
If hydrogen blocking layer is added to protect oxide semiconductor layer, then hydrogen diffusion is prevented, but device structure becomes more complex
Solution Approach 1:
The hydrogen blocking layer is strategically positioned only where needed - specifically between the plug structure and the oxide semiconductor layer - rather than covering the entire device. This localized approach provides targeted protection against hydrogen diffusion at the critical interface while minimizing the overall structural complexity and material usage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrogen blocking layers effectively prevent hydrogen diffusion, enhancing the stability and performance of the oxide semiconductor layer, thereby improving the overall quality and reliability of the semiconductor device.
Implementation Method 1
the hydrogen blocking layer is sufficient to prevent out-diffusion mist and hydrogen in the device, so as to avoid such out-diffusion mist and hydrogen diffusing along the plug and affecting the OS structure
Data Source
AI summary
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, a plug, a hydrogen blocking layer and an oxide semiconductor (OS) structure. The MOS transistor is disposed on the substrate, and the plug is disposed on the MOS transistor to electrically connect thereto. The hydrogen blocking layer is disposed only on sidewalls of the plug, wherein the hydrogen blocking layer includes a high-k dielectric layer. The OS structure is disposed on the substrate, wherein the OS structure includes an oxide semiconductor layer.