Oxide Semiconductor Film Hydrogen Removal via Permeable Capture Layer
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Solution Overview
Problem
Oxide semiconductor films often contain hydrogen, which increases conductivity and leads to shifted threshold voltages, causing normally-on behavior in transistors, affecting semiconductor characteristics.
Innovation Solution
A method involving the formation of an oxide semiconductor film, a hydrogen permeable film, and a hydrogen capture film, where heat treatment releases hydrogen from the oxide semiconductor film, which is then captured by the hydrogen capture film, reducing hydrogen content and improving semiconductor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If heat treatment is performed to release hydrogen from the oxide semiconductor film, then hydrogen content is reduced and semiconductor characteristics are improved, but additional process steps (forming hydrogen permeable film and hydrogen capture film) are required
Solution Approach 1:
The hydrogen permeable film and hydrogen capture film are formed in advance before the heat treatment step. This preliminary preparation enables the heat treatment to effectively remove hydrogen from the oxide semiconductor film by providing a controlled pathway for hydrogen diffusion and capture, thereby improving semiconductor characteristics while making the overall process manageable and systematic.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces hydrogen in the oxide semiconductor film, improving semiconductor characteristics and preventing normally-on behavior, leading to enhanced electric performance in semiconductor devices.
Implementation Method 1
forming a film which is over and in contact with the oxide semiconductor film and through which hydrogen diffuses (a hydrogen permeable film)
Implementation Method 2
releasing the hydrogen from the oxide semiconductor film by performing heat treatment
Data Source
AI summary
A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.