Oxide Semiconductor Transistor Hydrogen Extraction
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving reliable electrical characteristics, high on-state current, miniaturization, and low power consumption, particularly in transistors using oxide semiconductors, due to issues with impurity diffusion and oxygen vacancies.
Innovation Solution
A semiconductor device structure incorporating a three-layer oxide structure with specific compositions and thicknesses, including indium, aluminum, gallium, yttrium, or tin, and zinc, along with conductive layers of tantalum and nitrogen, is designed to inhibit impurity diffusion and oxygen vacancies, enhancing channel formation and reducing hydrogen concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor is formed using an oxide semiconductor thin film, then the device can achieve low power consumption and favorable electrical characteristics, but impurity diffusion and oxygen vacancies deteriorate the reliability and electrical performance
Solution Approach 1:
A hydrogen extraction layer is introduced as an intermediary between the oxide semiconductor layer and the source/drain electrodes. This layer acts as a mediator to extract hydrogen impurities from the oxide semiconductor, thereby improving electrical characteristics without affecting the underlying semiconductor structure
Solution Approach 2:
The patent changes the chemical composition parameters of the conductor layers by specifying that they contain materials capable of extracting hydrogen (such as tungsten, molybdenum, or their nitrides/oxides). This parameter change enables the conductor to serve dual functions: electrical conduction and hydrogen extraction, thereby improving reliability
2Length of moving object
If the oxide semiconductor layer is made thinner to achieve miniaturization, then device integration is improved, but hydrogen concentration increases and deteriorates electrical characteristics
Solution Approach 1:
The hydrogen extraction layer serves as a protective intermediary that compensates for the increased hydrogen concentration inherent in thin oxide semiconductor structures. By placing this layer adjacent to the thin semiconductor film, hydrogen is extracted even when the semiconductor thickness is reduced for miniaturization
Solution Approach 2:
The patent employs composite material structures where the conductor is formulated as a combination of metal (tungsten, molybdenum) and nitrogen or oxygen. This composite structure provides both electrical conductivity and hydrogen extraction capability, enabling effective hydrogen removal from thin semiconductor layers
3Ease of manufacture
If conventional conductive materials are used in source and drain electrodes, then manufacturing is simplified, but hydrogen remains in the oxide semiconductor and reduces on-state current
Solution Approach 1:
The patent changes the material composition parameters of the source/drain conductors to include materials with hydrogen extraction capability (tungsten, molybdenum, their nitrides, or oxides). This parameter change enables the same conductor formation processes to produce electrodes that simultaneously provide electrical connection and hydrogen extraction, improving on-state current without complicating manufacturing
Solution Approach 2:
The conductor layers are designed to perform multiple functions: electrical conduction, mechanical support, and hydrogen extraction from the oxide semiconductor. This multi-functionality is achieved by selecting materials that possess both conductive properties and hydrogen affinity, thereby eliminating the need for separate hydrogen extraction steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves the reliability and electrical characteristics of semiconductor devices by reducing impurity diffusion and oxygen vacancies, leading to higher on-state current and lower power consumption, while maintaining stability against thermal stress.
Implementation Method 1
Each of the second conductor and the third conductor contains a conductive material capable of extracting hydrogen
Data Source
AI summary
A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.