Inorganic Oxide Semiconductor Imaging Element Charge Transfer

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Solution Overview

Problem

Existing imaging elements, such as those described in JP 2016-63165A, face challenges in simplifying manufacturing processes while maintaining high yield and achieving excellent charge transfer characteristics. These challenges include complex manufacturing steps, potential material composition issues, and limitations in charge transfer efficiency due to mobility and energy level relations in semiconductor layers.

Innovation Solution

The proposed imaging element incorporates a photoelectric conversion unit with a photoelectric conversion layer and an inorganic oxide semiconductor material layer, where the inorganic oxide semiconductor material layer is composed of indium (In), tin (Sn), titanium (Ti), and zinc (Zn) atoms. This configuration includes a charge accumulation electrode separated from the first electrode, with an insulation layer in between, to facilitate efficient charge accumulation and transfer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional semiconductor layer structure is used, then manufacturing processes become complex, but charge transfer characteristics remain insufficient

Engineering Contradiction:

Improvemanufacturing process simplicityVSAvoidcharge transfer characteristics

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the material parameters of the semiconductor layer by specifying an inorganic oxide semiconductor material with particular composition ratios (In:Sn:Ti:Zn = 100:(5-50):(5-50):(5-50) atomic%). This material parameter change simplifies the manufacturing process while achieving excellent charge transfer characteristics, resolving the contradiction between ease of manufacture and charge transfer reliability.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If the inorganic oxide semiconductor material layer uses specific composition ratios, then charge transfer efficiency improves, but material composition control becomes more difficult

Engineering Contradiction:

Improvecharge transfer efficiencyVSAvoidmaterial composition control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent establishes specific parameter ranges for the inorganic oxide semiconductor material composition (In:Sn:Ti:Zn = 100:(5-50):(5-50):(5-50) atomic%). By defining these parameter ranges, the patent achieves excellent charge transfer efficiency while providing clear manufacturing guidelines that make composition control more manageable rather than more difficult.

Inventive Principle:

Principle #35Parameter changes

3Speed

If the photoelectric conversion unit is placed in contact with the first electrode, then charge transfer speed increases, but structural complexity increases

Engineering Contradiction:

Improvecharge transfer speedVSAvoidstructural complexity

Core Design Contradiction:

SpeedVSDevice complexity

Solution Approach 1:

The patent extracts the semiconductor layer from the conventional stacked structure and places it in direct contact with the first electrode, removing unnecessary intermediate layers. This extraction simplifies the overall structure while enabling faster charge transfer from the photoelectric conversion unit to the electrode, resolving the contradiction between speed and structural complexity.

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration simplifies the imaging element's structure and manufacturing process while achieving excellent charge transfer characteristics, reducing random noise, and improving imaging quality by ensuring full depletion of the charge accumulation unit.

Implementation Method 1

a photoelectric conversion unit formed in contact with the first electrode and above the charge accumulation electrode with an insulation layer interposed between the photoelectric conversion unit and the charge accumulation electrode

Methodology Applied

Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

the photoelectric conversion unit includes a photoelectric conversion layer and an inorganic oxide semiconductor material layer disposed in an order of the photoelectric conversion layer and the inorganic oxide semiconductor material layer from the second electrode side

Methodology Applied

Scientific EffectCharge conduction: Conduction (electrical)

Data Source

PatentUS12238948B2Imaging element, stacked imaging element, and solid-state imaging device

Publication Date: 2025.02.25 SONY GROUP CORP

AI summary

An imaging element 10 includes a first electrode 21, a charge accumulation electrode 24 disposed apart from the first electrode 21, a photoelectric conversion unit 23 formed in contact with the first electrode 21 and above the charge accumulation electrode 24 with an insulation layer 82 interposed between the photoelectric conversion unit 23 and the charge accumulation electrode 24, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes a photoelectric conversion layer 23A and an inorganic oxide semiconductor material layer 23B disposed in an order of the photoelectric conversion layer 23A and the inorganic oxide semiconductor material layer 23B from the second electrode side. The inorganic oxide semiconductor material layer 23B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.