Solid-state imaging element and electronic device
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Solution Overview
Problem
Existing solid-state imaging elements face challenges in enhancing the reliability of the technology proposed in Patent Document 1, which limits further improvements in image quality and stability.
Innovation Solution
A solid-state imaging element is designed with a specific layered structure, including a first photoelectric conversion section with a high-density first oxide semiconductor layer and a low-density second oxide semiconductor layer, where the hydrogen concentration of the first layer is lower than that of the second layer, and the photoelectric conversion layer contains organic semiconductor materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-layer oxide semiconductor structure is used, then the device structure is simple, but the reliability is insufficient
Solution Approach 1:
The oxide semiconductor layer is divided into two distinct layers: a first oxide semiconductor layer with high film density and low hydrogen concentration, and a second oxide semiconductor layer with low film density and high hydrogen concentration. This segmentation allows each layer to perform different functions, with the first layer providing stability and the second layer facilitating hydrogen-related processes, thereby improving overall device reliability without excessive complexity
Solution Approach 2:
Different regions of the oxide semiconductor structure are assigned different properties: the first oxide semiconductor layer has high film density and low hydrogen concentration for stability, while the second oxide semiconductor layer has low film density and high hydrogen concentration for reactive functionality. This local differentiation of material properties enables the structure to simultaneously achieve reliability and functional performance
2Reliability
If hydrogen concentration is increased to improve photoelectric conversion, then carrier generation increases, but OH adsorption and H2O elimination are promoted reducing stability
Solution Approach 1:
The oxide semiconductor structure is segmented into two layers with different hydrogen concentrations. The first layer maintains low hydrogen concentration to minimize carrier generation and enhance stability, while the second layer has high hydrogen concentration to facilitate photoelectric conversion processes. This segmentation allows the system to benefit from both low and high hydrogen concentration environments without the adverse effects of either extreme
Solution Approach 2:
Different hydrogen concentration levels are localized to different layers: the first oxide semiconductor layer maintains low hydrogen concentration for stability, while the second oxide semiconductor layer has high hydrogen concentration for photoelectric conversion. This spatial distribution of hydrogen concentration allows the system to simultaneously achieve stability and photoelectric performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the reliability of the solid-state imaging element by suppressing OH adsorption and H2O elimination, thereby reducing carrier generation and enhancing the stability of the imaging process.
Implementation Method 1
suppressing OH adsorption and H2O elimination
Implementation Method 2
a photoelectric conversion layer, and a second oxide semiconductor layer in this order
Data Source
AI summary
To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.