Oxide Semiconductor Insulating Layer Barrier Design
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Solution Overview
Problem
Existing semiconductor devices with thin film transistors face challenges in maintaining stable electric characteristics due to moisture and hydrogen ingress, which affects the reliability and performance of oxide semiconductor layers.
Innovation Solution
Incorporating insulating layers with boron, aluminum, antimony, or phosphorus elements, formed using a sputtering method, to create a barrier that prevents moisture and hydrogen from entering the oxide semiconductor layer, while also using plasma treatment and dehydration/dehydrogenation processes to enhance the stability of the thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer is formed using a sputtering method with a silicon target containing boron or aluminum elements, then the barrier property against moisture and hydrogen is improved, but the device complexity increases
Solution Approach 1:
The patent changes the compositional parameters of the insulating layer by incorporating specific elements (boron: 1×10^18 to 1×10^22 atoms/cm³, aluminum: 3×10^19 to 1×10^22 atoms/cm³) into the silicon oxide matrix. This parameter modification enhances the barrier properties against moisture and hydrogen ingress, thereby improving the stability of electric characteristics of the oxide semiconductor layer without fundamentally changing the layer structure
Solution Approach 2:
The patent creates a composite insulating layer by combining silicon oxide with boron and/or aluminum elements. This composite structure provides superior barrier properties compared to pure silicon oxide, as the added elements modify the material's density and chemical resistance to moisture and hydrogen, thus improving reliability
2Reliability
If plasma treatment is performed using N2O, N2, or Ar gas before forming the insulating layer, then the interface quality between oxide semiconductor layer and insulating layer is improved, but the manufacturing process time increases
Solution Approach 1:
The patent applies plasma treatment using N2O, N2, or Ar gas as a preliminary step before forming the insulating layer. This preliminary action removes adsorbed water and hydrogen from the oxide semiconductor layer surface, creating a cleaner interface that prevents moisture and hydrogen ingress. Although it adds a process step, it ensures high interface quality and long-term device stability
3Reliability
If the concentration of boron in the insulating layer is increased to enhance barrier properties, then the prevention of moisture and hydrogen ingress is improved, but the manufacturing precision control becomes more difficult
Solution Approach 1:
The patent defines a specific concentration range for boron (1×10^18 to 1×10^22 atoms/cm³) and aluminum (3×10^19 to 1×10^22 atoms/cm³) in the insulating layer. This parameter specification balances barrier effectiveness with manufacturability, allowing sufficient margin for process variation while ensuring adequate protection against moisture and hydrogen ingress
Solution Approach 2:
The patent applies different concentration ranges for boron and aluminum elements within the insulating layer to optimize their respective contributions to barrier properties. By locally optimizing the concentration of each element, the patent achieves effective moisture and hydrogen prevention while maintaining control over the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents moisture and hydrogen ingress, improving the reliability and stability of the thin film transistor by creating a robust interface between the oxide semiconductor layer and the insulating layers, leading to enhanced electric characteristics and prolonged device performance.
Implementation Method 1
The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element
Implementation Method 2
Before the insulating layer containing a boron element or an aluminum element is formed, plasma treatment using a gas such as N2O, N2, or Ar is performed. The plasma treatment using a gas such as N2O, N2, or Ar removes adsorbed water or hydrogen on the oxide semiconductor layer
Data Source
AI summary
It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.