Oxide Semiconductor Insulator Structure for Hydrogen Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, excellent frequency characteristics, high reliability, miniaturization, and reduced power consumption, while maintaining stable electrical characteristics and high productivity.
Innovation Solution
A semiconductor device is designed with a transistor having an oxide in the channel formation region, surrounded by insulators with controlled hydrogen and nitrogen concentrations, where the first insulator has a lower hydrogen concentration and the second insulator has a lower nitrogen concentration, and both insulators release oxygen to reduce oxygen vacancies and improve crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional semiconductor materials and structures are used, then manufacturing process is simple, but on-state current is insufficient and frequency characteristics are poor
Solution Approach 1:
The insulator structure is segmented into multiple layers with different hydrogen concentrations. The first insulator layer has a first hydrogen concentration and the second insulator layer has a second hydrogen concentration different from the first, creating distinct functional zones that collectively improve transistor performance without requiring complex single-layer structures
Solution Approach 2:
Different regions of the insulator structure are assigned different local qualities through controlled hydrogen concentration gradients. The first insulator layer and second insulator layer have different hydrogen concentrations to provide localized functions: one layer primarily reduces oxygen vacancies while the other suppresses hydrogen diffusion into the oxide semiconductor, achieving multiple benefits through spatially differentiated properties
2Reliability
If oxide semiconductor with CAAC or nc structure is used, then electrical characteristics improve, but manufacturing precision and hydrogen concentration control become more difficult
Solution Approach 1:
The insulator layers are prepared in advance with predetermined hydrogen concentration profiles before the oxide semiconductor is formed. By pre-configuring the first insulator layer with a first hydrogen concentration and the second insulator layer with a second hydrogen concentration, the structure is ready to immediately protect the oxide semiconductor from hydrogen contamination during subsequent manufacturing steps
Solution Approach 2:
The dual-layer insulator structure acts as an intermediary barrier between the oxide semiconductor and the external environment. The first insulator layer serves as a primary barrier against hydrogen diffusion, while the second insulator layer provides additional protection and oxygen supply, collectively mediating the interaction between the oxide semiconductor and hydrogen-containing atmospheres during manufacturing and operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a semiconductor device with enhanced on-state current, frequency characteristics, reliability, and reduced power consumption, while ensuring stable electrical performance and high productivity.
Implementation Method 1
both insulators release oxygen to reduce oxygen vacancies and improve crystallinity
Implementation Method 2
the first insulator has a lower hydrogen concentration than the second insulator
Data Source
AI summary
A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.