Oxide Semiconductor Layer Structure for Stable Transistor Characteristics
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving small variations in transistor characteristics, high reliability, favorable electrical characteristics, high on-state current, miniaturization, high integration, and low power consumption.
Innovation Solution
A semiconductor device is designed with a specific layered structure, including a first insulator, a first oxide layer, conductive layers, and additional insulator layers, where the metal concentration varies across different layers to optimize transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor structure is used, then manufacturing is simpler, but transistor characteristics show large variation and reliability is low
Solution Approach 1:
The patent applies local quality by creating distinct layers with different metal concentrations within the insulator structure. The first insulator has a first region with a first metal concentration and a second region with a second metal concentration, allowing different functional zones to be optimized locally for carrier supply and electrical characteristics while maintaining overall device reliability
Solution Approach 2:
The patent uses composite materials by combining multiple insulator layers with varying metal concentrations and compositions. The first insulator contains both first and second regions with different metal concentrations, and a second insulator is added with different composition, creating a composite structure that simultaneously achieves low off-state current and high on-state current through the combined effects of different material properties
2Power
If metal concentration is increased to improve on-state current, then power consumption increases, but if decreased then on-state current reduces
Solution Approach 1:
The patent applies local quality by spatially separating the functions of carrier supply and current conduction. The first region with higher metal concentration supplies carriers to the oxide semiconductor, while the second region with lower metal concentration conducts current with low resistance. This local differentiation allows the device to achieve both high on-state current and low power consumption by optimizing each region for its specific function
Solution Approach 2:
The patent segments the insulator into multiple regions with different metal concentrations. The first insulator is divided into a first region and a second region, and a second insulator is added, creating segmented zones that independently control carrier supply and current conduction. This segmentation enables precise control over the balance between on-state current and power consumption
Data Source
AI summary
A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.