Oxide Semiconductor Layer Structure for Low-Leakage Transistors
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, high reliability, low power consumption, and high integration density while maintaining low off-state current and high on-state current, which are essential for advanced electronic applications.
Innovation Solution
The semiconductor device incorporates specific layers of oxides and insulators, including a CAAC-OS structure, with carefully controlled atomic ratios and oxygen content to optimize electrical performance and reliability, and uses insulators with barrier properties to inhibit oxygen and hydrogen diffusion, ensuring stable operation and reduced oxygen vacancies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structures are used, then manufacturing simplicity is maintained, but electrical characteristics and reliability deteriorate due to high off-state current and power consumption
Solution Approach 1:
The semiconductor device is divided into multiple functional layers including a semiconductor layer, insulator layer, and electrode layer. Each layer is independently formed and optimized for its specific function, allowing complex electrical characteristics to be achieved through simple stacking of individual components rather than complex monolithic structures
Solution Approach 2:
The device employs composite material structures where a semiconductor layer (such as oxide semiconductor) is combined with insulator layers and electrode layers. This composite approach enables the device to achieve both low off-state current and high on-state current by leveraging the complementary properties of different materials in each layer
2Productivity
If transistor size is reduced for higher integration density, then integration density improves, but maintaining low off-state current and high on-state current becomes more difficult
Solution Approach 1:
The semiconductor layer is designed with specific local properties including controlled thickness (5 nm to 200 nm) and localized oxygen content distribution. The insulator layer is positioned specifically at the interface between semiconductor and electrode to locally suppress harmful interactions. This localized optimization allows miniaturization while maintaining electrical characteristics
Solution Approach 2:
The device utilizes controlled oxygen content parameters in the semiconductor layer and insulator layer, as well as adjustable layer thickness parameters, to optimize electrical characteristics. By tuning these parameters rather than changing device geometry, the device maintains performance at smaller sizes for higher integration density
3Loss of energy
If oxide semiconductor is used to reduce off-state current, then power consumption is reduced, but manufacturing precision and oxygen content control become critical challenges
Solution Approach 1:
An insulator layer is introduced as an intermediary between the semiconductor layer and electrode layer. This insulator layer acts as a buffer that protects the semiconductor layer from oxygen depletion during electrode formation and prevents direct harmful interactions, thereby maintaining oxygen content stability without requiring extremely precise manufacturing control
Solution Approach 2:
The insulator layer is formed beforehand to cover the semiconductor layer before electrode deposition. This pre-formed protective layer prevents oxygen loss from the semiconductor layer during subsequent manufacturing steps, cushioning against potential degradation before it can occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in semiconductor devices with improved electrical characteristics, high reliability, reduced power consumption, and enhanced integration density, achieving low off-state current and high on-state current, suitable for advanced electronic applications.
Implementation Method 1
uses insulators with barrier properties to inhibit oxygen and hydrogen diffusion
Implementation Method 2
a transistor using an oxide semiconductor has extremely low leakage current in a non-conduction state
Data Source
AI summary
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.