Oxide Semiconductor Layout for Low-Parasitic High-Density Memory
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Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization, high integration, favorable electrical characteristics, frequency performance, reliability, long-term data retention, high-speed data writing, reduced power consumption, and design flexibility.
Innovation Solution
A semiconductor device is designed with an oxide semiconductor, featuring a specific conductor configuration and insulator structure that includes a capacitor and a transistor with a self-aligned gate electrode, reducing parasitic capacitance and allowing for miniaturization and high integration while maintaining low power consumption and reliable electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor devices are miniaturized and highly integrated, then device density increases, but parasitic capacitance increases and electrical characteristics deteriorate
Solution Approach 1:
The patent transitions from planar transistor structures to vertically stacked three-dimensional structures, including stacked transistors and capacitors arranged in multiple layers. This dimensional change increases integration density while maintaining electrical performance by reducing parasitic capacitance through optimized spatial arrangement and reduced overlap areas between conductive elements.
Solution Approach 2:
The patent implements nested structures where capacitors are positioned within or adjacent to transistor regions, and multiple device layers are stacked vertically. This nesting approach maximizes space utilization for high integration while the self-aligned fabrication process ensures precise positioning that minimizes parasitic capacitance between nested elements.
2Productivity
If transistor size is reduced for miniaturization, then integration density improves, but leakage current increases and power consumption rises
Solution Approach 1:
The patent employs oxide semiconductor materials with wide bandgap properties in the transistor channel region, which inherently provide lower off-state leakage current compared to conventional silicon-based semiconductors. This material choice enables miniaturized transistors to maintain low power consumption even at reduced sizes, as the oxide semiconductor's electrical characteristics suppress leakage current effectively.
3Ease of manufacture
If conventional fabrication processes are used, then manufacturing simplicity is maintained, but manufacturing precision and alignment accuracy deteriorate in miniaturized structures
Solution Approach 1:
The patent implements self-aligned fabrication processes where subsequent lithographic patterns are automatically positioned relative to previously formed structures without requiring additional alignment steps. For example, capacitor electrodes are formed to be self-aligned with transistor gates, and interlayer conductors are positioned self-aligned to underlying structures. This self-alignment mechanism maintains high precision in miniaturized structures while keeping the fabrication process relatively simple.
4Ease of manufacture
If device structures are simplified for ease of manufacture, then fabrication complexity reduces, but design flexibility and performance optimization are limited
Solution Approach 1:
The patent divides the semiconductor device into multiple independently configurable functional modules, including separate transistor regions, capacitor regions, and interlayer conductor structures that can be independently designed and optimized. This segmentation allows different regions to be tailored for specific performance requirements while maintaining a standardized fabrication process, thus providing design flexibility without increasing manufacturing complexity.
Data Source
AI summary
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; a third conductor including a region that is over the oxide and overlaps with a region between the first conductor and the second conductor; a first insulator over the third conductor; a fourth conductor that is electrically connected to the first conductor through a first opening provided in the first insulator; a second insulator that is provided over the first insulator and that is provided over the fourth conductor in the first opening; a fifth conductor overlapping with the fourth conductor with the second insulator positioned therebetween in the first opening; and a sixth conductor electrically connected to the second conductor in a second opening provided in the first insulator and the second insulator. The fifth conductor and the sixth conductor are in contact with a top surface of the second insulator over the first insulator.