Oxide Semiconductor Field-Effect Mobility at High Temperatures
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining high field-effect mobility at elevated temperatures and require high-temperature processing, which complicates their production and reliability.
Innovation Solution
A semiconductor device with an oxide semiconductor film is developed, featuring a structure where the field-effect mobility increases with temperature, formed at low temperatures using a sputtering method with an In-Ga-Zn oxide target, and includes a channel region with aligned c-axis crystals and amorphous regions, ensuring stable physical properties and high reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor devices are used, then high field-effect mobility can be achieved at room temperature, but field-effect mobility decreases at elevated temperatures
Solution Approach 1:
The patent changes the material parameter by using oxide semiconductor (In-Ga-Zn oxide) instead of conventional semiconductor materials. This material substitution fundamentally alters the temperature dependence of field-effect mobility, enabling mobility to increase with temperature rather than decrease, thus resolving the contradiction between reliability and operating temperature range.
2Reliability
If high-temperature processing is used to improve device performance, then electrical characteristics can be enhanced, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the processing temperature parameter by enabling low-temperature fabrication of oxide semiconductor devices. This allows achieving good electrical characteristics without requiring complex high-temperature processing steps, thus resolving the contradiction between electrical characteristics and manufacturing process complexity.
3Reliability
If high-temperature processing is used to improve device performance, then electrical characteristics can be enhanced, but manufacturing cost increases
Solution Approach 1:
The patent changes the processing temperature parameter to enable low-temperature fabrication, which directly reduces manufacturing costs by eliminating the need for expensive high-temperature equipment and energy consumption, while still achieving good electrical characteristics through the unique properties of oxide semiconductor materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device exhibits improved electrical characteristics, maintaining high field-effect mobility and low off-state current even at high temperatures, enabling reliable operation across a wide temperature range while being fabricated at lower costs and with improved productivity.
Implementation Method 1
formed at low temperatures using a sputtering method with an In-Ga-Zn oxide target
Data Source
AI summary
A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.