Oxide Semiconductor Transistor Moisture Barrier Substrate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the manufacturing of oxide semiconductor transistors, particularly in displays like organic electroluminescence (EL) and liquid crystal displays, parasitic capacitance between the gate and source-drain electrodes can lead to variations in signal voltage, deteriorating image quality and reducing manufacturing yield, especially due to moisture infiltration which affects the electrical characteristics of the oxide semiconductor film.
Innovation Solution
A method involving the formation of an oxide semiconductor film and a gate electrode on a substrate with an insulating film covering both, where the substrate material has low moisture permeability to prevent moisture infiltration, and the use of etching protection films to protect the oxide semiconductor film during manufacturing, ensuring electrical connections through through-holes in the oxide film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film is formed covering the gate electrode and oxide semiconductor film, then electrical insulation is improved, but moisture infiltration into the oxide semiconductor film increases
Solution Approach 1:
A barrier film is introduced as an intermediary layer between the insulating film and the oxide semiconductor film. This barrier film specifically blocks moisture infiltration while maintaining the electrical insulation function of the insulating film, thus resolving the contradiction between electrical insulation and moisture protection.
Solution Approach 2:
The single insulating film structure is segmented into multiple functional layers: a lower insulating film layer and an upper barrier film layer. Each layer performs a specific function - the lower layer provides electrical insulation while the upper layer provides moisture barrier protection, thereby resolving the contradiction between insulation and moisture infiltration.
2Ease of manufacture
If the oxide semiconductor film is exposed during manufacturing, then electrical connections can be established, but the oxide semiconductor film is damaged
Solution Approach 1:
Through-holes are formed in the barrier film and insulating film before the oxide semiconductor film is fully exposed or processed. This preliminary formation of connection pathways allows subsequent electrical connections to be established without requiring extensive exposure of the oxide semiconductor film, thereby maintaining film integrity while enabling manufacturing.
Solution Approach 2:
The barrier film serves as a protective intermediary that can be selectively removed or opened to form through-holes, allowing electrical connections to be established without exposing the underlying oxide semiconductor film to damage. The barrier film protects the oxide semiconductor film during manufacturing processes while still permitting connection formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses moisture infiltration, improves the electrical characteristics of the transistors, enhances the reliability of the displays by maintaining uniform in-plane TFT characteristics, and reduces the variation of threshold voltage, thereby improving the overall performance and yield of the manufacturing process.
Implementation Method 1
Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate
Data Source
AI summary
A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.