Oxide Semiconductor Deposition with Multiple Oxides for Low-Power Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving favorable electrical characteristics, normally-off operation, high reliability, high on-state current, miniaturization, integration, productivity, data retention, high-speed data writing, design flexibility, and reduced power consumption.
Innovation Solution
A manufacturing method involving the formation of first and second oxides, insulators, and conductors on a substrate, utilizing PEALD and thermal ALD methods, with substrate heating and gas introduction steps, and microwave irradiation to enhance semiconductor device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If oxide semiconductor transistors are used to achieve low leakage current, then power consumption is reduced, but manufacturing complexity increases due to multiple deposition steps
Solution Approach 1:
The patent applies parameter changes by varying substrate temperature during different deposition steps (e.g., 300-700°C for first insulator, 100-400°C for second insulator) and controlling oxygen radical concentration to achieve optimal film properties. This resolves the contradiction by optimizing manufacturing parameters to reduce complexity while maintaining low leakage current characteristics
Solution Approach 2:
The patent uses composite material structures with multiple insulator layers (first insulator with silicon oxide and second insulator with silicon nitride) and oxide semiconductor channels. This composite approach enables low leakage current through material properties while the systematic deposition process manages manufacturing complexity
2Reliability
If multiple insulator layers are deposited to improve reliability, then device reliability improves, but manufacturing time increases
Solution Approach 1:
The patent implements continuous useful action by performing sequential deposition of first insulator, oxide semiconductor, and second insulator without breaking vacuum or exposing to atmosphere between steps. This maintains reliability through consistent film quality while reducing manufacturing time by eliminating intermediate processing cycles
Solution Approach 2:
The patent optimizes deposition parameters including substrate temperature ranges (300-700°C for first insulator, 100-400°C for second insulator) and oxygen radical concentrations to achieve rapid deposition with high film quality. This resolves the contradiction by enabling fast deposition that maintains reliability while minimizing manufacturing time
3Reliability
If substrate temperature is increased during deposition to improve film quality, then electrical characteristics improve, but energy consumption increases
Solution Approach 1:
The patent applies parameter changes by optimizing substrate temperature for each deposition step (300-700°C for first insulator, 100-400°C for second insulator) and controlling oxygen radical concentration. This resolves the contradiction by achieving good electrical characteristics at moderate temperatures through parameter optimization rather than always using high temperature
Solution Approach 2:
The patent uses periodic action by alternating between deposition steps at different temperature ranges and oxygen radical concentrations. This allows energy-efficient operation by using lower temperatures (100-400°C) for the second insulator deposition after the first insulator is formed at higher temperature, reducing overall energy consumption while maintaining film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in semiconductor devices with improved electrical characteristics, normally-off operation, high reliability, high on-state current, miniaturization, integration, productivity, data retention, high-speed data writing, design flexibility, and reduced power consumption.
Implementation Method 1
depositing a first insulating film over the first oxide film by a PEALD method
Implementation Method 2
The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300° C.
Implementation Method 3
a step of introducing a second gas that contains oxygen radicals and does not contain hydrogen atoms into the chamber are included
Implementation Method 4
The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300° C.
Data Source
AI summary
A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.