Oxide Semiconductor Conductivity Stabilization via Nitrogen Barrier
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Solution Overview
Problem
Maintaining stable electrical conductivity of oxide semiconductor materials in semiconductor devices is challenging due to variations in carrier generation during manufacturing processes.
Innovation Solution
Incorporating a first conductive film electrically connected to the oxide semiconductor film, with a first insulating film between them, to control carrier generation and stabilize conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a reduction process is applied to improve electrical conductivity of oxide semiconductor material, then electrical conductivity is improved, but stability of electrical conductivity deteriorates due to subsequent oxidation processes
Solution Approach 1:
A nitrogen-containing insulating film is introduced as an intermediary layer between the oxide semiconductor film and other layers. This film acts as a barrier that prevents oxygen from reaching the oxide semiconductor film, thereby maintaining its reduced state and stable electrical conductivity without interfering with the overall device structure or function.
Solution Approach 2:
The nitrogen-containing insulating film creates a chemically inert environment for the oxide semiconductor film by blocking oxygen diffusion. This inert barrier prevents oxidation of the reduced oxide semiconductor material, allowing it to maintain stable electrical conductivity throughout subsequent manufacturing processes and device operation.
2Ease of manufacture
If various processes such as oxidation process are applied after reduction process, then manufacturing completeness is achieved, but electrical conductivity of oxide semiconductor material becomes unstable
Solution Approach 1:
The nitrogen-containing insulating film serves as a protective intermediary that allows subsequent manufacturing processes to be performed on other device components without affecting the oxide semiconductor film. The film blocks harmful oxygen while permitting the manufacturing workflow to proceed to completion.
Solution Approach 2:
The nitrogen-containing insulating film is formed before subsequent oxidation processes, preliminarily protecting the oxide semiconductor film from oxygen exposure. This preliminary protective action ensures that electrical conductivity stability is maintained throughout all following manufacturing steps.
Data Source
AI summary
Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.