Oxide Semiconductor Transistor Oxygen Barrier Layer
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Solution Overview
Problem
Oxide semiconductor TFTs face oxygen deficiency and heat resistance issues during the hydrogen sintering process, leading to shifted threshold voltage and insufficient oxygen supply to the channel.
Innovation Solution
Incorporating a first oxygen barrier layer to prevent oxygen diffusion and absorption by the source and drain electrodes, ensuring efficient oxygen supply to the oxide semiconductor layer through a structured configuration and manufacturing method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If hydrogen sintering heat treatment is performed to manufacture oxide semiconductor TFTs, then the semiconductor device can be formed at low temperature (400°C or lower), but the oxide semiconductor TFT exhibits low heat resistance and oxygen deficiency occurs
Solution Approach 1:
A nitrogen barrier layer is introduced as an intermediary between the oxide semiconductor layer and the environment during hydrogen sintering. This barrier layer prevents oxygen outdiffusion from the oxide semiconductor layer while allowing the low-temperature formation process to proceed, thereby resolving the contradiction between low formation temperature and heat resistance reliability
Solution Approach 2:
The nitrogen barrier layer is formed in advance before the hydrogen sintering process. This preliminary action prepares the structure to prevent oxygen loss during the subsequent heat treatment, enabling the oxide semiconductor TFT to maintain its oxygen content and heat resistance even when formed at low temperatures
2Device complexity
If conventional TFT structure is used without oxygen barrier layer, then the device structure is simple, but oxygen diffuses to source and drain electrodes causing threshold voltage shift
Solution Approach 1:
A nitrogen barrier layer is positioned between the oxide semiconductor layer and the source/drain electrodes to act as an intermediary that prevents oxygen diffusion. This thin barrier layer effectively stops oxygen migration that would otherwise cause threshold voltage shifts, while adding minimal structural complexity to the device
Solution Approach 2:
The nitrogen barrier layer is selectively positioned only in regions where oxygen diffusion prevention is critical - specifically between the oxide semiconductor layer and the source/drain electrodes. This localized application provides precise protection against threshold voltage shifts without unnecessarily complicating the entire device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the heat resistance and maintains sufficient oxygen supply to the oxide semiconductor layer, improving the overall performance and reliability of the TFT during heat treatment processes.
Implementation Method 1
a nitrogen barrier layer which prevents oxygen from being diffused out of the oxide semiconductor layer
Implementation Method 2
an oxygen supply layer which supplies oxygen to the oxide semiconductor layer; a first oxygen barrier layer which is provided on the oxygen supply layer
Data Source
AI summary
According to one embodiment, a transistor includes: a gate electrode; a gate insulating layer provided on the gate electrode; an oxide semiconductor layer provided on the gate insulating layer; an oxygen supply layer provided on the oxide semiconductor layer; a first oxygen barrier layer provided on the oxygen supply layer; a source electrode provided to penetrate the oxygen supply layer and the first oxygen barrier layer and connected to the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode, provided to penetrate the oxygen supply layer and the first oxygen barrier layer, and connected to the oxide semiconductor layer.