Oxide Semiconductor Device Low-Temperature Oxygen Supply
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving stable electrical characteristics, high productivity, and reduced temperature processing, particularly when using oxide semiconductor films, which often result in high oxygen vacancy defects and impaired electrical performance.
Innovation Solution
A method involving the formation of an oxide semiconductor device with a gate insulating film that releases oxygen, using a conductive film to supply oxygen plasma treatment and a sputtering method for metal oxide film deposition, ensuring sufficient oxygen supply even at reduced temperatures, thereby reducing oxygen vacancies and enhancing electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering method is used to form oxide semiconductor layer, then manufacturing process is simple, but oxygen vacancy defects increase and electrical characteristics deteriorate
Solution Approach 1:
The patent applies preliminary action by forming a gate insulating film that releases oxygen before forming the oxide semiconductor layer. This pre-supplies oxygen to the structure, preventing oxygen vacancies during subsequent processing. The gate insulating film is prepared in advance with oxygen-rich composition, so when the oxide semiconductor layer is formed on top, oxygen diffuses to fill vacancies, ensuring high electrical characteristics without complex post-processing.
Solution Approach 2:
The gate insulating film serves as an intermediary that mediates oxygen supply between the environment and the oxide semiconductor layer. Instead of directly controlling oxygen content in the semiconductor layer through complex sputtering parameters, the patent uses the gate insulating film as an oxygen reservoir that passively supplies oxygen to the semiconductor layer, simplifying the manufacturing process while improving electrical characteristics.
2Manufacturing precision
If high temperature processing is applied to reduce oxygen vacancies, then electrical characteristics improve, but processing temperature constraint is violated
Solution Approach 1:
The patent prepares the gate insulating film in advance with excess oxygen content and a composition that facilitates oxygen release at low temperatures. This preliminary oxygen preparation allows the oxide semiconductor layer to receive sufficient oxygen without requiring high-temperature processing, thus maintaining electrical characteristics below 340°C.
Solution Approach 2:
The patent changes the composition parameters of the gate insulating film to be oxygen-rich (e.g., using In-Ga-Zn oxide with specific atomic ratios where oxygen content exceeds stoichiometric requirements). This compositional parameter change enables the film to act as an oxygen source at low temperatures, eliminating the need for high-temperature processing to reduce oxygen vacancies.
3Manufacturing precision
If oxygen supply is increased to reduce oxygen vacancies, then electrical characteristics improve, but additional processing steps are required
Solution Approach 1:
The patent merges the oxygen supply function into the gate insulating film formation step itself. Instead of adding separate oxygen supply processes, the gate insulating film is formed with oxygen-rich composition that inherently provides oxygen to the oxide semiconductor layer. This combines structure formation with oxygen supply, maintaining high productivity while improving electrical characteristics.
Solution Approach 2:
The gate insulating film provides self-service by automatically supplying oxygen to the oxide semiconductor layer through diffusion during the formation process. The oxygen supply occurs passively as the semiconductor layer is deposited on the oxygen-rich gate insulating film, eliminating the need for active, energy-intensive oxygen plasma treatment or ion implantation steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of semiconductor devices with improved electrical characteristics and high productivity while maintaining low processing temperatures, effectively addressing the issues of oxygen vacancy and temperature constraints.
Implementation Method 1
a third step of supplying oxygen to the second insulating film through the first conductive film
Implementation Method 2
supplying oxygen to the second insulating film through the first conductive film
Implementation Method 3
a fourth step of forming a metal oxide film over the second insulating film in an atmosphere containing oxygen
Data Source
AI summary
To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.