Oxide Semiconductor Active Region With Variable Oxygen Concentration
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Solution Overview
Problem
High integration in semiconductor data storage devices reduces their reliability, necessitating improved electrical characteristics to maintain performance and functionality.
Innovation Solution
A semiconductor device with an active region using InGaZnO with a variable oxygen concentration, featuring distinct oxygen levels in source/drain regions and a channel region, along with a gate electrode, to optimize threshold voltage and resistance for enhanced electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration is implemented in semiconductor data storage devices, then device functionality and capacity are improved, but reliability deteriorates
Solution Approach 1:
The patent applies local quality by creating distinct oxygen concentration zones within the active region: source/drain regions with first oxygen concentration, channel region with second oxygen concentration, and intermediate region with gradient oxygen concentration. This spatial variation in material properties optimizes electrical characteristics locally while maintaining overall device reliability under high integration conditions.
Solution Approach 2:
The patent implements parameter changes by varying the oxygen atomic concentration in the oxide semiconductor material across different regions of the active region. The oxygen concentration serves as a controllable parameter that modifies electrical properties such as threshold voltage and carrier concentration, enabling improved device performance and reliability.
2Ease of manufacture
If uniform oxygen concentration is used in the active region, then manufacturing simplicity is maintained, but electrical characteristics deteriorate
Solution Approach 1:
The patent implements local quality by establishing different oxygen concentrations in different regions: higher oxygen concentration in source/drain regions for stability, lower oxygen concentration in channel region for optimal conductivity, and gradient concentration in intermediate regions for smooth transition. This resolves the contradiction by making the material properties spatially optimized rather than uniformly simplified.
Solution Approach 2:
The patent introduces dynamic control of oxygen concentration through selective annealing processes applied to different regions at different stages of fabrication. The oxygen concentration is not static but can be adjusted and optimized independently for each region, enabling precise control of electrical characteristics while maintaining manufacturing feasibility.
Data Source
AI summary
A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.