Oxide Semiconductor Layer Oxygen Ion Implantation
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Solution Overview
Problem
Current semiconductor devices using oxide semiconductors face challenges in achieving favorable electric characteristics, high on-state current, low power consumption, and reliability, particularly in maintaining data retention when power is stopped, due to issues with oxygen vacancies and crystal damage during oxygen ion implantation.
Innovation Solution
A method involving the formation of an oxide semiconductor layer on a substrate, followed by selective etching, oxygen ion implantation at specific angles, and heat treatment to diffuse oxygen, ensuring efficient oxygen supply without damaging the crystal structure, using a c-axis aligned crystalline oxide semiconductor (CAAC-OS) film with a block layer to prevent oxygen release and enhance oxygen diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen ion implantation is performed to reduce oxygen vacancies in oxide semiconductor layer, then electrical characteristics are improved, but crystal structure damage occurs
Solution Approach 1:
An insulating layer containing oxygen is formed over the oxide semiconductor layer before oxygen ion implantation. This insulating layer serves as a protective barrier that prevents direct high-energy ion impact on the crystal structure while still allowing oxygen diffusion to occur, thereby reducing crystal damage during the oxygen supplementation process
Solution Approach 2:
The insulating layer acts as an intermediary medium between the oxygen ions and the oxide semiconductor layer. It facilitates oxygen diffusion to fill vacancies while absorbing and distributing the impact energy of incoming ions, preventing direct damage to the crystal structure
2Reliability
If high concentration of oxygen is supplied to oxide semiconductor layer, then electrical characteristics improve, but excess oxygen causes degradation
Solution Approach 1:
Oxygen is supplied locally and selectively to regions where vacancies exist, rather than uniformly throughout the entire oxide semiconductor layer. The insulating layer confines oxygen diffusion to specific areas, ensuring adequate oxygen concentration to improve electrical characteristics while preventing excessive oxygen accumulation that would cause degradation
3Ease of manufacture
If conventional transistor structures are used, then manufacturing is simple, but power consumption is high and speed is limited
Solution Approach 1:
The invention changes the material parameter by using oxide semiconductor materials with specific properties (wide bandgap, high mobility potential) and controls the oxygen concentration parameter through controlled implantation and diffusion processes. These parameter changes enable the transistor to achieve low power consumption and high-speed operation while maintaining ease of manufacture through established thin-film fabrication techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor devices with improved electrical characteristics, high on-state current, low power consumption, and enhanced reliability, while maintaining data retention even when power is stopped, by effectively managing oxygen vacancies and crystal integrity.
Implementation Method 1
implanting an oxygen ion in the oxide semiconductor layer
Implementation Method 2
performing heat treatment on the oxide semiconductor layer to diffuse oxygen into the oxide semiconductor layer
Data Source
AI summary
Provided is a method for manufacturing a semiconductor device with favorable electrical characteristics. The following steps are performed in the following order: forming an oxide semiconductor film over a substrate having a substantially planar surface; selectively etching the oxide semiconductor film to form an oxide semiconductor layer; implanting an oxygen ion on a top surface of the oxide semiconductor layer and a side surface of the oxide semiconductor layer in a cross-section perpendicular to the substantially planar surface in a channel width direction of the oxide semiconductor layer from an angle 0°<θ<90°; forming an insulating layer over the oxide semiconductor layer, and performing heat treatment on the oxide semiconductor layer to diffuse oxygen into the oxide semiconductor layer.