P-Type Oxide Semiconductor Structure for Stable Oxygen Vacancies
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Solution Overview
Problem
P-type oxide semiconductors in integrated circuit devices are electrically unstable due to chemical changes in oxygen vacancies during processing and operation, affecting transistor performance.
Innovation Solution
Incorporating a material with lower Gibbs free energy into the p-type oxide semiconductor layer to stabilize oxygen vacancies, enhancing the electrical performance and stability of transistors by facilitating consistent charge carrier levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If p-type oxide semiconductor is used in IC devices, then transparency is achieved, but electrical stability deteriorates due to oxygen vacancy changes
Solution Approach 1:
A nitrogen-containing material is introduced as an intermediary substance between processing steps to stabilize oxygen vacancies in the p-type oxide semiconductor. The nitrogen material acts as a mediator that prevents oxygen loss without compromising the transparency properties of the oxide semiconductor, thus resolving the contradiction between transparency and electrical stability.
Solution Approach 2:
The chemical composition parameter of the oxide semiconductor is modified by incorporating nitrogen-containing materials. This parameter change stabilizes the oxygen vacancy concentration, improving electrical stability while maintaining the optical transparency characteristic of oxide semiconductors.
2Reliability
If oxygen vacancies are stabilized using nitrogen-containing material, then electrical performance is improved, but device complexity increases
Solution Approach 1:
The nitrogen-containing material application is merged with existing processing steps such as annealing or deposition processes. By combining the oxygen vacancy stabilization function with routine manufacturing steps, the device complexity increase is minimized while achieving improved electrical performance.
Solution Approach 2:
The nitrogen-containing material serves multiple functions: it stabilizes oxygen vacancies, improves electrical performance, and can be integrated into standard semiconductor processing workflows. This multi-functionality reduces the need for additional specialized processing equipment or steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved electrical performance and stability in transistors by stabilizing oxygen vacancies, maintaining consistent charge carrier levels, and retaining transparency benefits associated with oxide semiconductors.
Implementation Method 1
employing a p-type oxide semiconductor structure that includes a nitrogen-containing material. The nitrogen-containing material may stabilize oxygen vacancies within the p-type oxide semiconductor
Data Source
AI summary
Some embodiments relate to an integrated circuit device including a semiconductor layer including a first material having a first Gibbs free energy and a second material having a second Gibbs free energy less than the first Gibbs free energy. The first material includes a p-type oxide semiconductor material. The integrated circuit device further includes a dielectric layer contacting a first surface of the semiconductor layer, a gate conductive structure contacting the dielectric layer opposite the semiconductor layer, and a first source-drain conductive structure and a second source-drain conductive structure electrically connected to the semiconductor layer.