Oxide Semiconductor Insulating Layer Oxygen Supply
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Solution Overview
Problem
Transistors using oxide semiconductors face reliability issues due to fluctuations in threshold voltage and increased off-state current, primarily caused by oxygen deficiency and charge trapping at the interfaces between insulating layers and the oxide semiconductor layer.
Innovation Solution
Incorporating a silicon peroxide radical into the base and gate insulating layers to reduce interface states and oxygen deficiency, thereby stabilizing the oxide semiconductor layer and minimizing charge trapping, which is achieved by forming insulating layers using materials like silicon oxide, silicon oxynitride, or aluminum oxide that contain silicon peroxide radicals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If oxide semiconductor transistors are used to achieve higher operation speed and easier manufacturing, then manufacturing efficiency and speed are improved, but reliability deteriorates due to threshold voltage fluctuation and off-state current increase
Solution Approach 1:
The patent applies local quality by creating distinct insulating layers with different compositions and functions: a base insulating layer containing silicon peroxide radicals for oxygen supply, a gate insulating layer for electrical isolation, and a protective insulating layer for surface protection. Each layer is optimized for its specific location and function, with the base insulating layer specifically engineered to address oxygen deficiency at the semiconductor interface while other layers handle different requirements.
Solution Approach 2:
The patent employs composite materials by combining silicon oxide with nitrogen to create silicon oxynitride insulating layers. This composite material provides both the oxygen supply capability of silicon oxide and additional benefits from nitrogen incorporation, including improved interface quality and reduced charge trapping. The composite structure allows simultaneous achievement of oxygen supply and electrical isolation functions.
2Device complexity
If conventional insulating layers are used at the oxide semiconductor interface, then device structure is simplified, but threshold voltage fluctuation increases due to oxygen deficiency and charge trapping
Solution Approach 1:
The patent applies preliminary action by pre-forming the base insulating layer containing silicon peroxide radicals before fabricating the oxide semiconductor layer. This base layer is prepared in advance to provide oxygen during subsequent processing and operation, preventing oxygen deficiency before it occurs. The preliminary preparation of this specialized insulating layer ensures that oxygen supply is already in place to stabilize the semiconductor interface.
Solution Approach 2:
The patent introduces an intermediary substance - silicon peroxide radicals within the base insulating layer - that acts as an oxygen reservoir between the insulating layer and the oxide semiconductor. This intermediary provides oxygen atoms to the semiconductor interface, mediating the interaction between the insulating layer and semiconductor to prevent oxygen deficiency and reduce interface states.
3Speed
If oxide semiconductor layers are formed to achieve high-speed operation, then operation speed is improved, but off-state current increases due to charge trapping at interfaces
Solution Approach 1:
The patent converts the potentially harmful effect of oxygen deficiency into a beneficial oxygen supply mechanism. By intentionally creating a base insulating layer rich in silicon peroxide radicals (which contain excess oxygen), the oxygen-deficient oxide semiconductor interface is continuously supplied with oxygen atoms. This transforms what would normally be a harmful oxygen deficiency into a controlled oxygen supply system that reduces interface states and charge trapping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces threshold voltage fluctuations and off-state current, enhancing the reliability and stability of the semiconductor device by supplying oxygen to the oxide semiconductor layer and minimizing adverse charge interactions at the interfaces.
Implementation Method 1
supplying oxygen from the base insulating layer to the oxide semiconductor layer
Data Source
AI summary
An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.