Stacked Oxide Semiconductor Transistor Oxygen Supply Method
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Solution Overview
Problem
In semiconductor devices with oxide semiconductor transistors in stacked layers, oxygen vacancies lead to shifts in threshold voltage, requiring time-consuming oxygen supplying treatments that are not efficient for throughput, especially when transistors in different layers have varying conditions.
Innovation Solution
A method where oxygen supplying treatment is performed simultaneously on oxide semiconductor films in adjacent layers by forming an opening in the insulating film to expose the channel formation region, allowing for optimized oxygen doping or annealing across multiple layers, reducing oxygen vacancies and controlling threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If oxygen supplying treatment is performed on oxide semiconductor films in stacked layers, then threshold voltage control is improved, but manufacturing time increases
Solution Approach 1:
The patent divides the oxide semiconductor films into different layers (first oxide semiconductor film and second oxide semiconductor film) and performs oxygen supplying treatment selectively on each layer. The first film receives oxygen treatment through openings formed in the insulating film, while the second film receives oxygen treatment through different openings formed later in the process. This segmentation allows threshold voltage control for each transistor layer while managing the overall manufacturing time through parallel processing of different layers.
2Manufacturing precision
If oxygen supplying treatment is performed on each oxide semiconductor film separately, then threshold voltage control is improved, but productivity decreases
Solution Approach 1:
The patent combines the oxygen supplying treatment process for multiple oxide semiconductor films into a unified manufacturing flow. By forming openings in the insulating film at different stages and performing oxygen treatment on different layers sequentially within the same overall process framework, the patent achieves precise threshold voltage control for each transistor while maintaining efficient manufacturing throughput. The merging of these treatment steps into the integrated circuit fabrication process prevents productivity loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient control of threshold voltage across multiple layers, reducing oxygen vacancies and improving the manufacturing throughput by optimizing oxygen treatment conditions for each layer, ensuring transistors operate as normally-off devices with stable electrical characteristics.
Implementation Method 1
oxygen doping treatment is performed on the oxide semiconductor film
Implementation Method 2
oxygen supplying treatment such as oxygen annealing treatment or oxygen doping treatment is performed on an oxide semiconductor
Implementation Method 3
oxygen supplying treatment such as oxygen annealing treatment or oxygen doping treatment is performed on an oxide semiconductor
Data Source
AI summary
In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region.