Oxide Semiconductor Transistor P-Type Silicon Protection
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Solution Overview
Problem
Oxide semiconductor-based transistors face variations and deterioration in electrical characteristics due to damage from etchants, plasma, and contamination, such as hydrogen, during the manufacturing process, leading to inconsistent performance.
Innovation Solution
A p-type silicon layer is integrated over and in contact with the oxide semiconductor layer to act as a protective film, reducing hydrogen contamination and capturing oxygen vacancies, thereby stabilizing the electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional oxide semiconductor layer is used without additional protective layers, then the manufacturing process is simpler, but the electrical characteristics vary and deteriorate due to damage from etchants, plasma, and hydrogen contamination
Solution Approach 1:
A p-type silicon layer is introduced as an intermediary between the oxide semiconductor layer and the external environment. This intermediate layer acts as a protective barrier that prevents hydrogen contamination and captures oxygen vacancies, thereby stabilizing the electrical characteristics of the oxide semiconductor without requiring complex multi-layer protective structures
Solution Approach 2:
The invention changes the parameter of the semiconductor layer by using p-type silicon instead of conventional n-type or intrinsic silicon. This parameter change (doping type) enables the silicon layer to effectively capture oxygen vacancies and prevent hydrogen diffusion, improving reliability while maintaining structural simplicity
2Ease of manufacture
If the oxide semiconductor layer is exposed during manufacturing processes, then the manufacturing process is more straightforward, but hydrogen contamination and oxygen vacancies increase causing performance deterioration
Solution Approach 1:
The p-type silicon layer is formed in advance before subsequent manufacturing steps that could cause hydrogen contamination. This preliminary protective layer is already in place to prevent hydrogen diffusion into the oxide semiconductor during etching and plasma processing, eliminating the need for complex in-situ protection measures
Solution Approach 2:
The p-type silicon layer, which could be seen as an additional structural element, actually converts the potential harm of exposure during manufacturing into a benefit by actively capturing oxygen vacancies and preventing hydrogen contamination. The layer transforms the manufacturing challenge into an opportunity for enhanced device stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The p-type silicon layer effectively suppresses variations and deterioration in electrical characteristics by preventing hydrogen entry and capturing carriers generated by oxygen vacancies, resulting in improved transistor reliability.
Implementation Method 1
even in the case where oxygen vacancy is generated on the back channel side of the oxide semiconductor layer to generate carriers (electrons), the p-type silicon layer can capture the generated carriers (electrons)
Implementation Method 2
the p-type silicon layer serves as a protective film for reducing entry of en element such as hydrogen to the oxide semiconductor layer
Data Source
AI summary
The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.