Oxide Semiconductor PiN Diode Breakdown Voltage
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Solution Overview
Problem
Conventional PiN diodes face challenges in reducing reverse recovery current and increasing breakdown voltage, with existing methods either compromising on semiconductor characteristics or requiring thick i-type semiconductor layers.
Innovation Solution
Incorporating oxide semiconductors with metals like aluminum, indium, and gallium in the n-type and p-type semiconductor layers, specifically using α-Ga2O3 or its mixed crystals, to enhance breakdown voltage and semiconductor characteristics without increasing layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the i-type semiconductor layer is made thicker to increase breakdown voltage, then breakdown voltage is improved, but reverse recovery current decreases and device size increases
Solution Approach 1:
The patent introduces oxide semiconductor layers with specific metal compositions (Al, In, Ga in i-type; Ir, Ga in p-type; Al, In, Ga in n-type) to fundamentally change the material parameters at the interfaces. This enables achieving high breakdown voltage with thinner i-type layers while controlling reverse recovery current through compositional engineering rather than thickness alone
Solution Approach 2:
The patent creates composite semiconductor structures by incorporating oxide semiconductor layers with different metal compositions at the interfaces of the i-type and p-type layers. These composite interfaces (e.g., Ga2O3/SiO2, IrO2/SiO2) provide enhanced breakdown characteristics and reduced reverse recovery current without requiring increased layer thickness
2Strength
If oxide semiconductors with specific metals are incorporated to improve breakdown voltage, then breakdown voltage and semiconductor characteristics are improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies oxide semiconductor layers with specific metal compositions locally at the critical interface regions between i-type/p-type and p-type/i-type layers, rather than throughout the entire structure. This localized approach targets the breakdown voltage enhancement where it is most needed while minimizing manufacturing complexity
Solution Approach 2:
The patent specifies particular metal compositions (Al, In, Ga for n-type and i-type; Ir, Ga for p-type) to optimize breakdown characteristics. By controlling the chemical composition parameters of the oxide semiconductor layers, the patent achieves enhanced performance without requiring complex structural modifications
Data Source
AI summary
In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.