Oxide Semiconductor Pixel Electrode Overlap for Voltage Stability

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Solution Overview

Problem

Display devices using amorphous silicon or polysilicon transistors face challenges in achieving multi-gray scale display due to voltage fluctuations caused by off-state current, which affect the accuracy and quality of grayscale representation.

Innovation Solution

A display device incorporating a transistor with an oxide semiconductor that has an off-state current of 100 aA/μm or less, where the pixel electrode overlaps with source and gate signal lines, reducing voltage fluctuations and parasitic capacitance to enable high-quality multi-gray scale display.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a transistor with amorphous silicon or polysilicon is used, then the device can be manufactured with conventional processes, but voltage fluctuation occurs due to off-state current which prevents multi-gray scale display

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidvoltage stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the material parameter of the transistor from amorphous silicon or polysilicon to oxide semiconductor, which fundamentally alters the off-state current characteristic from 10^-13 A to 10^-18 A or lower. This parameter change enables voltage stability sufficient for multi-gray scale display while maintaining compatibility with conventional manufacturing processes through sputtering and other standard techniques.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the number of gray scales is increased to 1024, then display quality improves, but voltage fluctuation of 16.6 mV corresponds to approximately 4 gray scales making the effect of off-state current不可忽略

Engineering Contradiction:
Improvegrayscale precisionVSAvoidvoltage stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

By changing the transistor material to oxide semiconductor, the off-state current is reduced to 10^-18 A or lower, which suppresses voltage fluctuation to levels that do not affect grayscale precision. This enables 1024 gray scales to be displayed with high quality without significant voltage drop.

Inventive Principle:
Principle #35Parameter changes

3Object-affected harmful factors

If the pixel electrode overlaps with source signal lines to reduce parasitic capacitance, then crosstalk is suppressed, but the overlapped area must be precisely controlled to maintain symmetry

Engineering Contradiction:
ImprovecrosstalkVSAvoidoverlap area uniformity
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent intentionally introduces asymmetry by adding dummy electrodes to one of the source signal lines to compensate for unequal overlapping areas. This asymmetric compensation approach achieves symmetry in total capacitance, suppressing crosstalk while being tolerant to manufacturing variations in the main pixel electrode overlapping.

Inventive Principle:
Principle #4Asymmetry

4Reliability

If the off-state current is reduced to enable multi-gray scale display, then voltage fluctuation decreases, but the transistor material becomes more difficult to manufacture with conventional processes

Engineering Contradiction:
Improvevoltage stabilityVSAvoidmanufacturability
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter to oxide semiconductor which can be manufactured using conventional sputtering processes and other standard semiconductor fabrication techniques. This parameter change achieves ultra-low off-state current (10^-18 A or lower) while maintaining ease of manufacture through established industrial processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces voltage fluctuations, allowing for precise grayscale representation and suppressing crosstalk, thereby enhancing the display quality and capability to handle increased gray scale levels without significant voltage drop.

Implementation Method 1

A display device includes a plurality of source signal lines, a plurality of gate signal lines which is provided so as to intersect with the source signal lines, and a pixel electrode to which a signal voltage of the source signal line is applied through a transistor including an oxide semiconductor

Methodology Applied
Scientific EffectOff-state current suppression: Electrical Resistance

Implementation Method 2

in the pixel electrode which is provided between a pair of the adjacent source signal lines, edge portions thereof overlap with edge portions of the source signal lines and an overlapped area with one of the source signal lines is substantially equal to an overlapped area with the other source signal line

Methodology Applied
Scientific EffectParasitic capacitance reduction: Capacitance

Data Source

PatentUS9217903B2Display device
Publication Date: 2015.12.22 SEMICON ENERGY LAB CO LTD
  • US9217903B2 patent drawing
  • US9217903B2 patent drawing
  • US9217903B2 patent drawing

AI summary

To provide a display device which can realize multi-gray scale display by reducing voltage fluctuation of a pixel, a display device includes a plurality of source signal lines, a plurality of gate signal lines which is provided so as to intersect with the source signal lines, and a pixel electrode to which a signal voltage of the source signal line is applied through a transistor including an oxide semiconductor, which is provided near an intersection portion of the source signal line and the gate signal line; in which in the pixel electrode which is provided between a pair of the adjacent source signal lines, edge portions thereof overlap with edge portions of the source signal lines and an overlapped area with one of the source signal lines is substantially equal to an overlapped area with the other source signal line.