Oxide Semiconductor Transistor Manufacturing via Oxygen Plasma Treatment
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Solution Overview
Problem
Semiconductor devices using oxide semiconductors face challenges with oxygen vacancies and hydrogen concentration, leading to unstable transistor characteristics and threshold voltage variations.
Innovation Solution
A method involving oxygen plasma treatment and specific layer formations with materials like boron, carbon, and fluorine to reduce oxygen vacancies and hydrogen concentration, enhancing the reliability and stability of oxide semiconductor transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen plasma treatment is performed to reduce oxygen vacancies, then reliability is improved, but device complexity increases
Solution Approach 1:
Oxygen plasma treatment is performed as a preliminary step before forming the oxide semiconductor layer to pre-condition the substrate surface, reducing oxygen vacancies in advance. This preliminary action ensures that the oxide semiconductor layer is formed on a surface with reduced oxygen vacancies, improving transistor characteristic stability without requiring complex in-situ treatment methods
Solution Approach 2:
The patent controls the plasma treatment parameters (oxygen flow rate, power, treatment time) to optimize the reduction of oxygen vacancies. By carefully adjusting these parameters, the treatment effectively reduces oxygen vacancies and improves reliability while avoiding excessive complexity in the manufacturing process
2Stability of the object's composition
If hydrogen concentration is reduced to control threshold voltage, then transistor characteristic stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs an inert atmosphere (nitrogen or rare gas) during the formation of the oxide semiconductor layer to prevent hydrogen contamination. By maintaining an inert environment throughout the manufacturing process, hydrogen concentration is effectively controlled without requiring complex hydrogen removal steps, thus improving transistor characteristic stability while managing manufacturing precision requirements
Solution Approach 2:
The patent removes hydrogen-containing materials and processes from the manufacturing sequence. By excluding hydrogen sources (such as certain organic precursors or wet cleaning steps) from the process, hydrogen concentration is controlled preventively, improving threshold voltage stability without demanding extreme precision control measures
3Reliability
If multiple semiconductor layers are formed to control hydrogen, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent introduces a protective layer (such as a nitrogen-containing insulating layer or oxide layer) as an intermediary between the oxide semiconductor layer and hydrogen-containing materials. This protective layer acts as a barrier that prevents hydrogen diffusion into the oxide semiconductor, improving reliability without requiring multiple semiconductor layers, thus avoiding excessive device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in semiconductor devices with improved reliability, stable characteristics, and controlled threshold voltage, achieving low off-state current and high on-state current.
Implementation Method 1
performing oxygen plasma treatment and removing the first layer to expose at least part of a surface of the second semiconductor
Data Source
AI summary
To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.