Oxide Semiconductor PLD Power Gating for Leakage Reduction
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Solution Overview
Problem
Semiconductor integrated circuits, particularly programmable logic devices (PLDs), face high power consumption due to unnecessary power supply voltage being applied to basic blocks that do not contribute to the circuit configuration, leading to increased leakage current and inefficient energy use, as well as limitations in the number of data rewrites in conventional programming cells like EEPROMs.
Innovation Solution
A semiconductor device that controls the power supply voltage to basic blocks using a programming cell with an insulated gate field effect transistor featuring an oxide semiconductor with a wide band gap and low off-state current, allowing for dynamic switching and reduced power consumption by selectively applying power only to blocks that contribute to the circuit configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If power supply voltage is supplied to all basic blocks in a PLD, then the circuit can operate with full functionality, but power consumption increases due to leakage current and unnecessary capacitance charging/discharging in non-contributing basic blocks
Solution Approach 1:
The PLD is divided into multiple basic blocks that can be independently controlled. Each basic block can be selectively activated or deactivated based on whether it contributes to the current circuit configuration, allowing power supply voltage to be applied only to necessary blocks rather than all blocks uniformly.
Solution Approach 2:
The system dynamically adjusts power supply voltage to basic blocks based on real-time circuit configuration requirements. When a basic block is not needed for the current configuration, power supply is stopped; when needed, power supply is restored, enabling adaptive power management that matches actual operational needs.
2Adaptability or versatility
If EEPROM is used as a programming cell for storing connection structures, then data can be rewritten, but the number of rewrite operations is limited to tens of thousands to hundreds of thousands of times due to insulating film deterioration from tunneling current
Solution Approach 1:
The invention changes the fundamental parameter of the programming cell from EEPROM technology to a new type of cell using oxide semiconductor transistors. This parameter change enables unlimited rewrite operations by eliminating the tunneling current mechanism that causes insulating film deterioration, while maintaining the desired data rewrite capability.
3Adaptability or versatility
If high integration is achieved in PLD by miniaturizing semiconductor elements or increasing the number of elements, then versatility and functionality improve, but power consumption increases due to more elements and larger capacitance
Solution Approach 1:
By segmenting the PLD into independently controllable basic blocks, the system can selectively power only the subset of blocks needed for the current configuration, even when the total number of blocks is large. This segmentation enables high integration while avoiding proportional increases in power consumption.
Solution Approach 2:
Instead of powering all basic blocks (excessive action), the system applies power only to the necessary subset of blocks (partial action) required for the current circuit configuration. This reduces unnecessary power consumption while maintaining full functionality of the integrated device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces power consumption by minimizing leakage current and extending the number of data rewrites in the semiconductor device, while maintaining high reliability and efficiency.
Implementation Method 1
featuring an oxide semiconductor with a wide band gap and low off-state current
Data Source
AI summary
It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.