Oxide Semiconductor Precursor Composition for Low-Temperature TFT Fabrication
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Solution Overview
Problem
Current liquid crystal display technologies require high-temperature processes for oxide semiconductor production, leading to high energy consumption and limitations in electron mobility, which are not suitable for large-scale and cost-effective manufacturing of thin film transistors.
Innovation Solution
A precursor composition for oxide semiconductors comprising a metal complex compound formed by a metal ion and an organic ligand, specifically α-substituted carboxylate, hydroxyl, or keto acids, is used in a low-temperature process, allowing for the formation of a thin film transistor array panel with reduced energy consumption and increased reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature heat treatment (400°C or more) is used to form oxide semiconductor by solution process, then oxide semiconductor layer can be formed, but energy consumption becomes large
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor material by introducing specific organic ligands (β-diketonate, carboxylate, or alkoxide) that enable oxide semiconductor formation at lower temperatures (200-400°C) compared to conventional high-temperature processes (400°C or more), thereby reducing energy consumption while maintaining layer formation capability
Solution Approach 2:
The patent uses organic ligands (β-diketonate, carboxylate, or alkoxide) as intermediary compounds that facilitate the formation of oxide semiconductor layers at reduced temperatures. These ligands act as mediators between the metal precursor and the final oxide semiconductor structure, enabling low-temperature processing while ensuring proper layer formation
2Reliability
If amorphous silicon is used as semiconductor material in active layer, then thin film transistor can be formed, but electron mobility degree is low
Solution Approach 1:
The patent changes the material composition parameter by replacing amorphous silicon with oxide semiconductor materials (such as In-Ga-Zn-O, In-Sn-O, or Zn-O) that inherently possess higher electron mobility, thereby improving the speed and performance of thin film transistors while maintaining their formation capability
3Reliability
If conventional oxide semiconductor process is used, then oxide semiconductor can be formed, but process temperature is high (400°C or more)
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor material by incorporating specific organic ligands (β-diketonate, carboxylate, or alkoxide) that enable the oxide semiconductor formation process to occur at lower temperatures (200-400°C) while maintaining proper layer formation and material quality
Solution Approach 2:
The patent employs organic ligands as intermediary substances that facilitate oxide semiconductor formation at reduced temperatures. These ligands serve as mediators that enable the decomposition and formation processes to proceed effectively at 200-400°C rather than requiring conventional high temperatures of 400°C or more
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The low-temperature process using the precursor composition enables the formation of oxide semiconductor layers with improved electron mobility and reliability, reducing energy costs and enhancing the performance of thin film transistors.
Implementation Method 1
heat-treating the metal compound solution coated on the substrate
Data Source
AI summary
Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn (Formula 1)Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.