Oxide Semiconductor Protection Structure Against Moisture Permeation
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Solution Overview
Problem
Conventional oxide semiconductor devices with a bottom gate configuration are prone to degradation due to moisture and hydrogen permeation, leading to compromised electrical characteristics such as increased threshold voltage distribution and decreased driving current, making them unsuitable for modern display devices.
Innovation Solution
A protection structure comprising a first and second metal oxide layer with different oxygen contents is integrated into the oxide semiconductor device to prevent moisture and hydrogen permeation, ensuring improved electrical characteristics by blocking external contaminants and maintaining stable charge carrier concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oxide semiconductor devices with bottom gate configuration are used, then device structure is simple and manufacturing is easier, but moisture and hydrogen permeation causes threshold voltage shifts and electrical characteristic degradation
Solution Approach 1:
The patent applies composite materials by forming a multi-layer protection structure comprising a first metal oxide layer and a second metal oxide layer with different oxygen contents. This composite structure provides enhanced barrier properties against moisture and hydrogen permeation, resolving the contradiction between simple device structure and electrical characteristic stability.
Solution Approach 2:
The patent applies local quality by creating regions with different oxygen contents within the metal oxide layers. The first metal oxide layer has a first oxygen content and the second metal oxide layer has a second oxygen content, creating local variations in material properties that enhance the overall protection against permeation while maintaining device reliability.
2Device complexity
If conventional oxide semiconductor structures are used without protection layers, then manufacturing process is simpler, but threshold voltage distribution increases and driving current decreases due to moisture and hydrogen permeation
Solution Approach 1:
The patent applies the intermediary principle by introducing metal oxide layers as protective intermediary structures between the oxide semiconductor active layer and the external environment. These intermediary layers act as barriers that prevent harmful moisture and hydrogen from reaching the sensitive semiconductor components, thereby reducing threshold voltage shifts and maintaining driving current.
Solution Approach 2:
The patent applies parameter changes by controlling the oxygen content in the metal oxide layers. The first metal oxide layer has a first oxygen content and the second metal oxide layer has a second oxygen content, where the oxygen content is controlled within specific ranges (40-70 at% for the first layer, 30-60 at% for the second layer). This parameter optimization enhances the protection capability while managing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protection structure effectively prevents threshold voltage shifts, enhancing the electrical characteristics of oxide semiconductor devices and ensuring their reliability in display applications by blocking moisture and hydrogen, thus maintaining stable performance and image quality in devices like organic light emitting and liquid crystal displays.
Implementation Method 1
A protection structure comprising a first and second metal oxide layer with different oxygen contents is integrated into the oxide semiconductor device to prevent moisture and hydrogen permeation
Data Source
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AI summary
A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.