Oxide Semiconductor Device Electrode Contact and Resist Removal
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Solution Overview
Problem
Existing methods for manufacturing semiconductor devices with oxide semiconductors face challenges in stabilizing electrical connections between electrode layers and preventing impurity entry, particularly when using ashing treatment, which can lead to poor electrical connections and oxidation of electrode surfaces.
Innovation Solution
A semiconductor device design featuring a stacked-layer structure of conductive layers with an oxide semiconductor film and insulating film, where the conductive layers form openings to establish stable connections between electrode layers, and ashing treatment using oxygen plasma is employed to remove resist masks without oxidizing the electrode surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If chemical liquid treatment is used to remove resist mask, then resist mask removal is effective, but impurities enter the oxide semiconductor layer
Solution Approach 1:
The patent employs an inert atmosphere (nitrogen or rare gas) during the resist mask removal process to prevent impurity entry into the oxide semiconductor layer. The processing chamber is filled with inert gas to create a protective environment that excludes reactive impurities while allowing the resist mask to be removed effectively.
2Reliability
If ashing treatment is used to remove resist mask, then impurity entry is prevented, but electrode layer surface is oxidized
Solution Approach 1:
The patent applies local quality by selectively protecting different regions during processing. The electrode layer is covered with a protective film (such as silicon nitride or silicon oxide) in regions where oxidation must be prevented, while allowing ashing treatment to proceed in other regions where resist mask removal is needed.
Solution Approach 2:
The patent performs preliminary action by forming a protective film on the electrode layer before conducting ashing treatment. This protective film is applied in advance to prevent oxidation during the subsequent ashing process, and is later removed after the resist mask has been successfully removed.
3Productivity
If oxide semiconductor layer is miniaturized, then device integration and speed are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the opening formation process into multiple stages with separate etching steps for the gate insulating film and oxide semiconductor layer. This segmentation allows each layer to be processed with optimized parameters, improving alignment precision even as device dimensions are reduced.
Solution Approach 2:
The patent uses the gate insulating film as an intermediary layer that facilitates precise alignment. The first opening portion is formed through the gate insulating film, which serves as a reference structure for subsequent etching of the oxide semiconductor layer, ensuring accurate alignment in miniaturized devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables stable electrical connections and high reliability in semiconductor devices by preventing impurity entry and oxidation, thereby improving the miniaturization and performance of oxide semiconductor-based transistors.
Implementation Method 1
ashing treatment using oxygen plasma is employed to remove resist masks without oxidizing the electrode surfaces
Data Source
AI summary
To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer. The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.