Oxide Semiconductor Device Side Contact Structure
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Solution Overview
Problem
Miniaturization of transistors leads to increased manufacturing complexity, yield reduction, and deterioration of electrical characteristics, making it challenging to produce high-density, reliable semiconductor devices with low power consumption and stable data retention.
Innovation Solution
A semiconductor device structure featuring an oxide semiconductor layer stack with aligned c-axes, where the source and drain electrode layers are formed on the same surface as the oxide semiconductor layer, and a gate electrode connected via side contact, allowing for simpler manufacturing and reduced contact resistance variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistor miniaturization is implemented to achieve high density integration, then device density increases, but manufacturing complexity increases and yield decreases
Solution Approach 1:
The source electrode layer and drain electrode layer are formed on the same surface as the oxide semiconductor layer, merging the formation process into a single step that reduces manufacturing complexity while enabling high-density integration
Solution Approach 2:
The electrode layers are positioned in a planar configuration on the same surface rather than extending vertically, changing the dimensional approach to reduce contact resistance variations and simplify manufacturing processes
2Quantity of substance
If transistor miniaturization is implemented, then device density increases, but electrical characteristics deteriorate
Solution Approach 1:
The oxide semiconductor layer has aligned c-axes orientation that provides uniform local crystal structure quality, ensuring consistent electrical characteristics even when transistors are miniaturized for high-density integration
Solution Approach 2:
The device uses a composite structure with oxide semiconductor layer and electrode layers formed on the same surface, creating a configuration that maintains electrical performance while enabling miniaturization
3Ease of manufacture
If conventional electrode formation is used, then manufacturing process is established, but contact resistance variations increase
Solution Approach 1:
The source and drain electrode layers are formed on the same surface as the oxide semiconductor layer in a single formation process, merging multiple steps into one that reduces contact resistance variations while maintaining ease of manufacture
Solution Approach 2:
The electrodes are positioned in a planar arrangement on the same surface rather than in vertical stacking, changing the spatial dimension to reduce contact resistance variations without complicating the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enables the production of high-density, reliable semiconductor devices with improved yield, reduced power consumption, and stable electrical characteristics, even when miniaturized, while maintaining data retention capabilities.
Implementation Method 1
a first oxide semiconductor layer over an insulating surface; a second oxide semiconductor layer over the first oxide semiconductor layer
Data Source
AI summary
To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a decrease in electrical characteristics caused by the decrease in the size, and a manufacturing method thereof. A source electrode layer and a drain electrode layer are formed on an upper surface of an oxide semiconductor layer. A side surface of the oxide semiconductor layer and a side surface of the source electrode layer are provided on the same surface and are electrically connected to a first wiring. Further, a side surface of the oxide semiconductor layer and a side surface of the drain electrode layer are provided on the same surface and are electrically connected to a second wiring.