Oxide Semiconductor Side Wall Protection Against Oxygen Deficiency
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Solution Overview
Problem
Oxide semiconductor layers in semiconductor devices suffer from oxygen deficiency when exposed to vacuum conditions during processing, leading to increased leakage current due to defects caused by plasma etching, which affects the reliability and performance of the devices.
Innovation Solution
A method for manufacturing semiconductor devices involves performing heat treatments to cover the side walls of the oxide semiconductor layer with an insulating oxide, preventing exposure to vacuum and reducing oxygen deficiency, thereby minimizing defects and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the side surfaces of the oxide semiconductor layer are exposed to vacuum during processing, then the etching process can be performed, but oxygen is extracted from the side surfaces causing defects (oxygen deficiency) and increased leakage current
Solution Approach 1:
An insulating oxide layer is formed on the side surfaces of the oxide semiconductor layer before the etching process. This preliminary protective action prevents oxygen extraction during subsequent vacuum exposure and plasma etching, thereby avoiding oxygen deficiency defects while maintaining etching capability
Solution Approach 2:
The insulating oxide layer acts as an intermediary protective barrier between the oxide semiconductor layer and the vacuum/plasma environment. This intermediate layer allows the etching process to proceed while preventing direct harmful interaction between the vacuum environment and the oxide semiconductor, thus preventing oxygen extraction
2Shape
If plasma etching is performed on the oxide semiconductor layer, then the desired shape can be achieved, but metal atoms bond with chlorine or fluorine radicals causing oxygen atoms to be activated and desorbed, creating defects
Solution Approach 1:
The insulating oxide is deposited on the side surfaces before plasma etching occurs. This preliminary protective layer prevents direct bonding between metal atoms and chlorine/fluorine radicals during etching, thereby preventing oxygen atom activation and subsequent desorption that would create defects
Solution Approach 2:
The insulating oxide layer serves as an intermediary protective barrier during plasma etching. It allows the etching process to shape the oxide semiconductor layer while preventing harmful chemical reactions between plasma radicals and the oxide semiconductor, thus maintaining manufacturing precision
3Productivity
If the oxide semiconductor layer is processed in a vacuum environment, then processing can be completed, but the side surfaces are exposed to vacuum causing oxygen extraction and defects
Solution Approach 1:
The insulating oxide is formed on the side surfaces before vacuum processing begins. This preliminary protective measure enables subsequent vacuum-based processing to be completed while preventing oxygen extraction from the oxide semiconductor layer, thereby maintaining reliability
Solution Approach 2:
The insulating oxide layer acts as an intermediary protective barrier between the oxide semiconductor layer and the vacuum environment. This allows vacuum processing to be completed successfully while preventing direct harmful interaction that would cause oxygen deficiency defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach ensures sufficient oxygen presence on the oxide semiconductor layer surfaces, significantly reducing defects and leakage current, enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
side walls of the oxide semiconductor layer are covered with an insulating oxide; in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer can be reduced
Implementation Method 2
after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer
Data Source
AI summary
The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer are reduced.