Oxide Semiconductor Sidewall Spacer for Impurity Blocking
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Solution Overview
Problem
Oxide semiconductor materials like indium gallium zinc oxide (IGZO) are prone to environmental influences such as moisture, oxygen, and hydrogen, which affect their semiconductor characteristics and stability, leading to reliability issues in devices like TFTs and FETs.
Innovation Solution
A sidewall spacer is integrated on the oxide semiconductor layer to block impurities and enhance electrical stability, combined with an oxygen provider layer to manage oxygen vacancies and maintain material quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor materials are used in thin film transistors and field effect transistors, then high mobility and low leakage current are achieved, but the semiconductor characteristics are easily influenced by environment substances such as moisture, oxygen, and hydrogen
Solution Approach 1:
A sidewall spacer is introduced as an intermediary protective layer between the oxide semiconductor layer and the external environment. This spacer physically blocks moisture, oxygen, and hydrogen from reaching the sidewalls of the oxide semiconductor layer, thereby preventing environmental degradation while maintaining the electrical stability and reliability of the device
2Ease of manufacture
If the oxide semiconductor layer is exposed to environment substances, then manufacturing is simplified, but the material properties are easily influenced and product reliability deteriorates
Solution Approach 1:
The sidewall spacer is formed prior to subsequent processing steps as a preventive measure. By establishing this protective barrier before the oxide semiconductor layer can be exposed to harmful environmental substances during manufacturing and operation, the structure proactively prevents reliability issues while maintaining ease of manufacture through a straightforward formation process
Data Source
AI summary
An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.