Oxide Semiconductor Structure for Low Leakage and Stable Current
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Solution Overview
Problem
Current semiconductor devices using oxide semiconductors face challenges in achieving favorable electrical characteristics, high reliability, miniaturization, integration, productivity, and reduced power consumption, with issues related to changes in electrical characteristics and off-state current.
Innovation Solution
A semiconductor device structure incorporating a specific configuration of conductors and insulators with an oxide semiconductor, where the conductivity of the conductors is higher than the oxide, and the carrier density is optimized, along with a manufacturing method involving deposition and etching techniques to enhance the device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a transistor using an oxide semiconductor is employed to reduce leakage current, then power consumption is reduced, but electrical characteristics may change and reliability is compromised
Solution Approach 1:
The patent changes the physical and chemical parameters of the oxide semiconductor by introducing a specific multi-layer structure with different materials (In-O, Ga-O, Zn-O layers) and controlling their thickness ratios. This parameter optimization achieves both low leakage current and stable electrical characteristics, resolving the contradiction between power consumption reduction and reliability maintenance
Solution Approach 2:
The patent employs a composite oxide semiconductor structure combining multiple metal oxide layers (In-O, Ga-O, Zn-O) with specific compositional ratios. This composite approach leverages the complementary properties of each material to achieve low off-state current while maintaining stable on-state characteristics and high reliability
2Productivity
If the semiconductor device is miniaturized for high integration, then device density increases, but manufacturing precision and electrical characteristics become harder to control
Solution Approach 1:
The patent establishes specific parameter ranges for layer thicknesses (e.g., In-O layer: 2-20 nm, Ga-O layer: 1-10 nm, Zn-O layer: 1-5 nm) and their ratios, enabling precise control of electrical characteristics even in miniaturized devices. These standardized parameters facilitate high integration while maintaining manufacturing precision
Solution Approach 2:
The patent divides the oxide semiconductor into multiple functional layers with distinct roles (In-O for carrier supply, Ga-O for band structure control, Zn-O for stability). This segmentation allows independent optimization of each layer's thickness and composition, enabling precise control of overall device characteristics in miniaturized structures
3Power
If the conductivity of conductors is increased to improve electrical characteristics, then on-state current increases, but off-state leakage may worsen
Solution Approach 1:
The patent applies different material compositions and conductivity levels to different regions and layers of the oxide semiconductor. The In-O layer provides high carrier density for on-state current, while the Ga-O and Zn-O layers provide energy barrier control for off-state leakage suppression. This local quality differentiation resolves the contradiction between on-state power and off-state energy loss
Data Source
AI summary
A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.