Oxide Semiconductor Layer Structure for Stable Miniaturized Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving favorable electrical characteristics, high reliability, miniaturization, integration, and productivity, while addressing variations in electrical characteristics and power consumption, with a need for improved manufacturing processes and data retention capabilities.
Innovation Solution
The semiconductor device incorporates a layered structure with conductors and oxides, featuring aligned end portions and electrical connections through openings, utilizing materials like titanium nitride for conductive films, and a method that includes precise patterning and insulating film formation to enhance electrical connectivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor manufacturing processes are used, then existing devices can be produced, but electrical characteristics vary and reliability is insufficient
Solution Approach 1:
The patent applies parameter changes by precisely controlling the composition ratios of In-Ga-Zn-O oxide films and adjusting deposition conditions (temperature, pressure, gas flow rates) to achieve stable electrical characteristics. By changing physical and chemical parameters of the oxide semiconductor layer, the invention reduces variability in threshold voltage and off-state current across devices
Solution Approach 2:
The patent uses composite materials by combining In-Ga-Zn-O oxide semiconductor with multiple insulating layers (silicon oxide, silicon nitride, silicon oxynitride) and conductive layers. This composite structure provides both stable electrical characteristics and reduced variation, as each material contributes specific properties that collectively enhance reliability
2Area of moving object
If device size is reduced for miniaturization, then integration density increases, but manufacturing precision and electrical stability become more difficult to maintain
Solution Approach 1:
The patent applies local quality by creating specific In-Ga-Zn-O oxide film structures with controlled crystallinity in different regions. The oxide semiconductor layer is engineered with particular atomic ratios and crystal orientations in the channel formation region to maintain electrical stability even as device dimensions are reduced, allowing miniaturization without sacrificing manufacturing precision
3Use of energy by moving object
If power consumption is reduced, then energy efficiency improves, but electrical characteristics and data retention may be compromised
Solution Approach 1:
The patent utilizes parameter changes by exploiting the unique electrical properties of In-Ga-Zn-O oxide semiconductor, which exhibits extremely low off-state current (less than 1×10^-21 A/cm²) due to its band structure and carrier concentration characteristics. This allows the device to maintain data retention capability while consuming minimal power in the off-state, as the low leakage current prevents charge loss in storage nodes
Data Source
AI summary
A semiconductor device that can be miniaturized or highly integrated is provided.The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.