Oxide Semiconductor Conductor Structure with TaN Gradient Barrier
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving reliable, high-performance, miniaturized, and low-power consumption devices with favorable electrical characteristics, particularly in transistor manufacturing using oxide semiconductors.
Innovation Solution
A semiconductor device structure is developed with specific layers of oxides and conductors, including tantalum nitride, where the atomic ratio of nitrogen to tantalum varies across regions to enhance conductivity and reduce hydrogen diffusion, and a manufacturing method involving nitrogen atmosphere sputtering is used to form these layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductor materials and structures are used, then manufacturing is simpler, but reliability and electrical characteristics deteriorate due to hydrogen diffusion and oxidation
Solution Approach 1:
The conductor is divided into multiple regions with different nitrogen concentrations. The first region (near oxide semiconductor) has high nitrogen concentration to prevent hydrogen diffusion and oxidation, while the second region (upper layer) has lower nitrogen concentration for better conductivity. This segmentation resolves the contradiction by creating specialized zones that collectively improve reliability without requiring entirely new conductor materials.
Solution Approach 2:
Different regions of the conductor are given different local properties through varying nitrogen concentrations. The lower region provides protection against hydrogen diffusion and oxidation, while the upper region provides electrical conductivity. This local differentiation allows each region to optimize its function, improving overall device reliability while maintaining manufacturability through controlled composition gradients.
2Reliability
If uniform nitrogen concentration is used in conductor, then manufacturing is easier, but electrical characteristics deteriorate due to insufficient conductivity in protective regions
Solution Approach 1:
The nitrogen concentration parameter is varied continuously or in steps through the conductor thickness. By controlling the atomic ratio of nitrogen to tantalum to decrease from the lower region to the upper region, the patent achieves both protective functions (hydrogen diffusion barrier, oxidation resistance) and electrical functions (conductivity). This parameter gradient resolves the contradiction by allowing optimization of both reliability and electrical characteristics within a single conductor structure.
3Productivity
If device miniaturization is pursued, then integration density improves, but reliability deteriorates due to increased hydrogen diffusion and oxidation risks
Solution Approach 1:
The conductor is pre-configured with a nitrogen concentration gradient during manufacturing to establish protective properties before device operation. The high-nitrogen region near the oxide semiconductor acts as a pre-established barrier against hydrogen diffusion and oxidation, providing proactive protection that enables miniaturization without compromising reliability. This preliminary structural optimization allows smaller device dimensions while maintaining stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides semiconductor devices with improved reliability, electrical characteristics, high on-state current, and low power consumption, enabling miniaturization and high integration while maintaining stability and reducing defects.
Implementation Method 1
a manufacturing method involving nitrogen atmosphere sputtering is used to form these layers
Implementation Method 2
the atomic ratio of nitrogen to tantalum varies across regions to enhance conductivity and reduce hydrogen diffusion
Data Source
AI summary
A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.