Oxide Semiconductor Thin Film Transistor Substrate
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Solution Overview
Problem
Current microcrystalline thin film transistors have low field effect mobility, and polycrystalline silicon thin film transistors suffer from high costs and poor uniformity in field effect mobility due to costly crystallization processes and degradation from subsequent electrical processes.
Innovation Solution
A thin film transistor substrate using an oxide semiconductor with a gate line, gate electrode, and insulating layers, where the oxide semiconductor pattern is connected by a drain electrode through openings in the insulating layers, reducing exposure to degrading processes and improving field effect mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If polycrystalline silicon layer is used with crystallization process, then acceptable field effect mobility can be achieved, but the manufacturing cost increases and uniformity deteriorates
Solution Approach 1:
The patent changes the material from polycrystalline silicon to oxide semiconductor, eliminating the need for costly crystallization processes while maintaining high field effect mobility through the inherent properties of oxide semiconductor materials
Solution Approach 2:
The patent adopts oxide semiconductor which can be deposited using simpler and more cost-effective deposition methods compared to the expensive crystallization equipment required for polycrystalline silicon, reducing manufacturing costs
2Reliability
If polycrystalline silicon layer is used with crystallization process, then acceptable field effect mobility can be achieved, but the uniformity of field effect mobility becomes poor
Solution Approach 1:
The patent changes to oxide semiconductor material which provides more uniform electrical properties across the substrate, eliminating the uniformity issues inherent in polycrystalline silicon crystallization processes
Solution Approach 2:
The oxide semiconductor active layer provides homogeneous electrical properties across the entire substrate area, ensuring uniform field effect mobility in all pixels, which is critical for display quality
3Productivity
If oxide semiconductor is deposited and subsequent plasma or wet processes are applied, then fabrication can continue, but electrical properties of oxide semiconductor degrade
Solution Approach 1:
The patent extracts the oxide semiconductor active layer from exposure to subsequent plasma and wet processes by completing its fabrication early in the process sequence, protecting it from degradation mechanisms that affect electrical properties
Solution Approach 2:
The patent structures the fabrication process to protect the oxide semiconductor electrical properties beforehand by avoiding exposure to degrading processes, ensuring high reliability from the outset
Data Source
AI summary
An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern.