Nitrogen-Doped Oxide Semiconductor Thin Film Transistor Structure

The active layer is segmented into multiple oxide semiconductor layers with different nitrogen doping concentrations. Specifically, it includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer, where the middle layer has higher nitrogen doping concentration than the outer layers. This segmentation allows different regions to contribute differently: the nitrogen-doped middle layer provides stability, while the less-doped outer layers preserve mobility, thus resolving the contradiction between stability improvement and mobility maintenance.

Different regions of the active layer are assigned different nitrogen doping concentrations to achieve local optimization. The middle oxide semiconductor layer has higher nitrogen doping concentration to improve electrical indexes and stability, while the first and third layers have lower doping concentrations to maintain field effect mobility. This local quality differentiation allows the device to achieve both improved electrical indexes and constant field effect mobility simultaneously.