Oxide Semiconductor TFT UV Protection
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Solution Overview
Problem
Oxide semiconductor-based thin film transistors face stability degradation when simultaneously meeting bias temperature stress and photo characteristics, particularly in transparent display devices, where ultra-violet light exposure affects performance.
Innovation Solution
A thin film transistor substrate structure incorporating a transparent substrate with a thin film transistor layer made of oxide semiconductor material, a passivation layer, a pixel electrode, and ultra-violet light absorbing layers on both the substrate surface and the pixel electrode to protect against ultra-violet light while maintaining transparency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor material is used to achieve low cost and uniform characteristics, then manufacturing cost and uniformity are improved, but stability under ultra violet light exposure deteriorates
Solution Approach 1:
A UV absorbing layer is introduced as an intermediary component between the external environment and the oxide semiconductor thin film transistor. This layer selectively absorbs ultra violet light while allowing visible light to pass through, thereby protecting the oxide semiconductor from UV-induced degradation without compromising the transparency required for display applications.
Solution Approach 2:
The harmful ultra violet light is converted into a beneficial protective mechanism by using UV-absorbing materials that convert UV energy into harmless forms (such as heat or re-emitted visible light). This transforms the harmful UV radiation into a controlled process that protects the oxide semiconductor while maintaining device functionality.
2Illumination intensity
If transparency is maintained for display applications, then visible light transmission is improved, but ultra violet light protection is worsened
Solution Approach 1:
The UV absorbing layer is designed with selective optical properties that differ for different wavelengths of light. It exhibits high absorption for ultra violet wavelengths while maintaining high transmission for visible wavelengths. This local quality differentiation allows the same material layer to simultaneously provide UV protection and visible light transmission, resolving the contradiction between transparency and UV protection.
Solution Approach 2:
The solution employs composite material structures combining UV-absorbing compounds (such as metal oxides or organic UV absorbers) with transparent matrix materials. This composite approach enables the layer to exhibit both UV absorption and visible light transmission properties, simultaneously achieving protection and transparency requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the stability of oxide semiconductor thin film transistors by absorbing ultra-violet light without compromising visible light transmission, thereby improving the performance and reliability of thin film transistors in display devices.
Implementation Method 1
a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode
Data Source
AI summary
The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.