Oxide Semiconductor Transistor Circuit for Low Power Memory
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, miniaturization, high switching and writing speeds, low power consumption, and reliable memory retention, particularly with transistors using oxide semiconductor films.
Innovation Solution
A semiconductor device comprising a capacitor and transistors with an oxide semiconductor film, where the electrostatic capacitance is optimized, and the transistors have channel lengths suitable for miniaturization, enabling improved switching and writing speeds, and low power consumption, with the oxide semiconductor film containing specific elements like In, Ga, and Zn, and featuring c-axis aligned crystal parts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If transistors are miniaturized to increase integration density, then device size is reduced, but electrical characteristics and reliability deteriorate
Solution Approach 1:
The patent changes the material parameter from conventional semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics. This material substitution enables miniaturized transistors to maintain favorable electrical characteristics and reliability by leveraging the unique properties of oxide semiconductors, such as their ability to form stable interfaces and control carrier concentrations even at reduced dimensions.
Solution Approach 2:
The patent employs composite material structures including oxide semiconductor films combined with specific gate insulator materials and electrode materials. These composite structures are designed to optimize both the electrical performance and reliability of miniaturized transistors, allowing high integration density while maintaining device quality through carefully engineered material combinations.
2Volume of moving object
If transistor channel length is reduced for miniaturization, then integration density increases, but switching speed decreases
Solution Approach 1:
The patent utilizes parameter changes in the oxide semiconductor material properties, specifically controlling carrier concentration and mobility, to achieve fast switching speeds in miniaturized transistors. By optimizing these material parameters, the invention overcomes the typical speed degradation associated with reduced channel length while maintaining high integration density.
3Volume of moving object
If capacitor electrostatic capacitance is reduced for miniaturization, then device size is reduced, but memory retention characteristics deteriorate
Solution Approach 1:
The patent changes the material composition and structural parameters of the capacitor, utilizing oxide semiconductor-based structures that achieve high capacitance density. This material substitution allows the capacitor to maintain adequate electrostatic capacitance and memory retention characteristics even when miniaturized, overcoming the typical trade-off between size and retention performance.
Data Source
AI summary
A semiconductor device with a transistor having favorable electrical characteristics is provided. The semiconductor device has a memory circuit and a circuit that are over the same substrate. The memory circuit includes a capacitor, a first transistor, and a second transistor. A gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor. The circuit includes a third transistor and a fourth transistor that are electrically connected to each other in series. The first transistor and the third transistor each include an active layer including silicon, and the second transistor and the fourth transistor each include an active layer including an oxide semiconductor.