Oxide Semiconductor Transistor with Composite Layer Structure
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Solution Overview
Problem
Transistors using amorphous silicon have low field-effect mobility, and polycrystalline silicon requires high-temperature heat treatment or laser light treatment, making it difficult to achieve high-performance display devices with low power consumption and high integration.
Innovation Solution
A novel oxide semiconductor material with a composite structure is used, comprising a first region with indium, gallium, and zinc, and a second region with indium and zinc, alternately stacked to enhance field-effect mobility and reduce power consumption, allowing for high-performance display devices without the need for laser light treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous silicon is used for transistor channel formation, then the manufacturing process is simple, but the field-effect mobility is low
Solution Approach 1:
The patent uses a composite oxide semiconductor material comprising In-Ga-Zn-O and In-Zn-O in a layered structure. This composite material achieves high field-effect mobility (exceeding 10 cm²/Vs) while maintaining compatibility with existing manufacturing processes, resolving the contradiction between manufacturing simplicity and device performance.
Solution Approach 2:
The patent changes the material composition parameters by forming a specific layered structure with In-Ga-Zn-O and In-Zn-O regions. By controlling the atomic ratios (In:Ga:Zn = 1:1:1 to 1:3:3 for In-Ga-Zn-O and In:Zn = 1:1 to 1:3 for In-Zn-O) and layer thicknesses (5 nm to 50 nm each), the patent achieves high mobility without requiring complex manufacturing processes.
2Reliability
If polycrystalline silicon is used to improve field-effect mobility, then high-temperature heat treatment or laser light treatment is required, but this increases manufacturing complexity and cost
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based semiconductors to oxide semiconductors with specific compositional ratios. This material substitution enables high field-effect mobility to be achieved through simple sputtering deposition without requiring high-temperature heat treatment or laser light treatment, thereby reducing manufacturing complexity.
Solution Approach 2:
The patent employs a composite oxide semiconductor structure with In-Ga-Zn-O and In-Zn-O layers. This composite material design achieves high carrier mobility comparable to polycrystalline silicon but through a simpler single-step sputtering process, eliminating the need for subsequent high-temperature or laser treatment steps.
3Use of energy by moving object
If oxide semiconductor with high field-effect mobility is used, then power consumption is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent defines specific parameter ranges for the oxide semiconductor composition (In:Ga:Zn = 1:1:1 to 1:3:3 and In:Zn = 1:1 to 1:3) and layer thicknesses (5 nm to 50 nm). These parameter specifications enable manufacturers to achieve high mobility devices with controlled precision, balancing performance requirements with manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides transistors with stable electrical characteristics, low leakage current, high frequency characteristics, and high on-state current, achieving high field-effect mobility and reliable operation while reducing manufacturing costs.
Implementation Method 1
A novel oxide semiconductor material with a composite structure is used, comprising a first region with indium, gallium, and zinc, and a second region with indium and zinc, alternately stacked to enhance field-effect mobility
Data Source
AI summary
Provided is a novel semiconductor device. A switching element, specifically a transistor having a well potential structure is manufactured by utilizing a structure including at least a composite material in which a first region and a second region are stacked over a base like a superlattice. The thickness of each of the first region and the second region is greater than or equal to 0.5 nm and less than or equal to 5 nm. A band structure can be controlled by adjusting the number of stacks, which enables application to a variety of semiconductor elements.