Oxide Semiconductor Transistor for High-Speed Display Driving
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high-speed operation and maintaining a high aperture ratio, especially as display resolution increases, leading to decreased switching characteristics and longer writing times for display images.
Innovation Solution
A semiconductor device is developed with a driver circuit and pixel circuit formed using transistors over one substrate, featuring an oxide semiconductor with a microcrystal group in the superficial layer and an oxide insulating layer, along with a gate electrode and source/drain electrodes made from amorphous oxide conductors and metals, respectively, to enhance switching characteristics and reduce contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the definition of display portion is increased, then display quality is improved, but writing time increases and operation speed decreases
Solution Approach 1:
The patent changes the material parameter of the transistor from conventional semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve high field-effect mobility. This enables the transistor to operate at high speeds even in high-definition displays, resolving the contradiction between display quality and writing time
Solution Approach 2:
The patent uses a composite structure combining oxide semiconductor layer with amorphous oxide conductor for source/drain regions and metal gates. This composite material approach optimizes both the switching characteristics and operation speed, allowing high-definition displays to maintain fast writing speeds
2Manufacturing precision
If the aperture ratio is increased, then display quality is improved, but device area increases
Solution Approach 1:
By changing to oxide semiconductor transistors with superior electrical characteristics, the patent achieves better display quality with smaller transistor areas, effectively increasing the aperture ratio without proportionally increasing device area
3Ease of manufacture
If conventional semiconductor materials are used, then manufacturing process is simple, but field effect mobility is low and operation speed is slow
Solution Approach 1:
The patent changes the semiconductor material parameter from conventional materials to oxide semiconductor, achieving high field-effect mobility while maintaining compatibility with existing thin-film fabrication processes, thus resolving the contradiction between ease of manufacture and operation speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed operation and maintains a high aperture ratio, improving display quality by reducing contact resistance and increasing the frequency characteristics of the driver circuit, while preventing degradation of electric characteristics.
Implementation Method 1
an oxide semiconductor layer including a superficial layer which comprises a microcrystal group of nanocrystals
Implementation Method 2
a gate electrode layer, a source electrode layer, and a drain electrode layer of the first transistor are formed using an amorphous oxide conductor
Data Source
AI summary
Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.