Low-Temperature Oxide Semiconductor Transistor Etching

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Solution Overview

Problem

The manufacturing of field-effect transistors using silicon thin films on resin substrates is challenging due to high temperature requirements, leading to increased production costs and potential damage or erosion of insulation layers during processing, especially when using silicon oxide or acidic solutions.

Innovation Solution

A method involving the formation of a field-effect transistor with an oxide semiconductor layer and an inorganic insulating layer, where the inorganic insulating layer is covered and patterned using a photoresist film and developer to expose parts of the electroconductive layer, allowing for low-temperature processing and reducing the risk of damage or erosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silicon oxide is used as the insulation layer material, then the insulation performance and chemical resistance are improved, but the processing cost increases due to the requirement of dry-etching

Engineering Contradiction:

Improveinsulation performanceVSAvoidprocessing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the etching method parameter from dry-etching to wet-etching by using an alkaline solution, which maintains the high insulation performance of silicon oxide while significantly reducing processing costs and simplifying the manufacturing process

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If argon milling method is used to process the insulation layer, then the processing is simplified, but the surface of the insulation layer is damaged

Engineering Contradiction:

Improveprocessing simplicityVSAvoidsurface quality

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent replaces the mechanical argon milling method with a chemical wet-etching process using alkaline solution, which achieves the desired contact hole formation without causing surface damage to the insulation layer, thereby maintaining both processing simplicity and surface quality

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Productivity

If strong acidic solution is used to process the insulation layer, then the etching efficiency is improved, but the insulation layer is eroded

Engineering Contradiction:

Improveetching efficiencyVSAvoidinsulation layer integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent changes the chemical parameter from acidic solution to alkaline solution, which provides sufficient etching efficiency to form contact holes while preventing erosion and damage to the silicon oxide insulation layer, thus maintaining both productivity and reliability

Inventive Principle:

Principle #35Parameter changes

4Manufacturing precision

If high temperature heating process is used to form silicon thin film, then the film quality is improved, but the resin substrate is damaged due to low heat-resistance

Engineering Contradiction:

Improvefilm qualityVSAvoidsubstrate damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the temperature parameter from high temperature to low temperature processing, enabling the formation of oxide semiconductor films on heat-sensitive resin substrates without causing substrate damage, while still achieving sufficient film quality for transistor operation

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of field-effect transistors on flexible substrates with improved processing accuracy and cost-effectiveness by using an alkaline etching liquid to form contact holes without damaging the electroconductive layer, enhancing the reliability and performance of the transistors.

Implementation Method 1

exposing the photoresist film in a pattern shape

Methodology Applied

Scientific EffectPhotochemical change: Photopolymerisation

Implementation Method 2

removing an area of the inorganic insulating layer exposed from the resist pattern by using the developer as an etching liquid

Methodology Applied

Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS9214562B2Method of manufacturing field-effect transistor, field-effect display device and electromagnetic wave detector

Publication Date: 2015.12.15 SAMSUNG DISPLAY CO LTD

AI summary

There is provided a method of manufacturing a field-effect transistor, in which on a electroconductive layer including a source electrode, a drain electrode and pixel electrode formed by a conductive layer-forming, an inorganic insulating layer containing an inorganic material as a main component is formed so as to cover the electroconductive layer and an oxide semiconductive layer, and after a photoresist film is formed on the inorganic insulating layer and is exposed in a pattern shape, a resist pattern is formed by being developed using a developer in development, and by removing the area exposed from the resist pattern in the inorganic insulating layer by using the developer as an etching liquid, a part of the electroconductive layer is exposed, thereby forming a contact hole; a field-effect transistor, a display device and an electromagnetic wave detector.