Oxide Semiconductor Transistor Leakage Current Reduction
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Solution Overview
Problem
Semiconductor devices with wireless communication functions face high standby power consumption, which affects their operational lifetime and efficiency, particularly in active wireless tags where power is continuously consumed even when not in use.
Innovation Solution
The use of a transistor with a channel formation region made from an oxide semiconductor with a hydrogen concentration of less than or equal to 5×10^19 atoms/cm^3, which reduces leakage current and allows for controlled switching to minimize standby power consumption and extend device lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If intermittent operation control is implemented to reduce operating power consumption, then operating power consumption is reduced, but standby power consumption becomes a significant portion of total power consumption
Solution Approach 1:
The patent changes the electrical parameters of the transistor by using an oxide semiconductor with specifically controlled carrier concentration (lower than 1×10^14 cm^-3) and hydrogen concentration (lower than or equal to 5×10^19 atoms/cm^3). This parameter change reduces the leakage current in the off-state, thereby reducing standby power consumption while maintaining the intermittent operation control functionality.
2Ease of manufacture
If a conventional transistor is used in the semiconductor device, then the device can be manufactured with standard processes, but leakage current is high causing high standby power consumption
Solution Approach 1:
The patent modifies the material parameters of the transistor channel by using an oxide semiconductor with controlled carrier concentration and hydrogen concentration. This approach maintains compatibility with existing semiconductor manufacturing processes while achieving significantly reduced leakage current through precise control of material properties rather than changing the manufacturing process itself.
3Power
If high carrier concentration oxide semiconductor is used, then the transistor has good conductivity, but leakage current increases reducing the benefit of intermittent operation
Solution Approach 1:
The patent identifies and controls two critical parameters: carrier concentration and hydrogen concentration. By maintaining carrier concentration below 1×10^14 cm^-3 and hydrogen concentration at or below 5×10^19 atoms/cm^3, the patent achieves the optimal balance between conductivity and leakage current reduction, enabling the transistor to function effectively in intermittent operation mode.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces standby power consumption and extends the operational lifetime of semiconductor devices by minimizing electric discharge during idle states, enhancing their overall energy efficiency and performance.
Implementation Method 1
a channel formation region of the transistor is formed using an oxide semiconductor with a hydrogen concentration of lower than or equal to 5×10^19 atoms/cm³
Data Source
AI summary
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.