Oxide Semiconductor Transistor Material Differentiation
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Solution Overview
Problem
High-resolution display devices face challenges with increased transistor resistances due to the use of oxide semiconductor materials in channel layers, which can compromise the driving range of transistors.
Innovation Solution
The use of different oxide semiconductor materials for the channel layers of gate drivers and driving transistors, with tin-containing oxide semiconductor material for switching transistors and non-tin containing oxide semiconductor material for driving transistors, allows for a single masking process in manufacturing, reducing transistor size and improving mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If oxide semiconductor material of high mobility is applied to the channel layer of driving transistors, then transistor size is reduced, but driving range of the driving transistor is compromised
Solution Approach 1:
The patent applies different oxide semiconductor materials to different transistor types: high-mobility tin-containing oxide semiconductor for switching transistors (where size reduction is critical) and low-mobility non-tin oxide semiconductor for driving transistors (where driving range is critical). This local differentiation resolves the contradiction by optimizing material properties according to specific functional requirements of each transistor type.
2Reliability
If different materials are used for channel layers of gate driver transistors and driving transistors, then performance is optimized, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple material deposition steps into a single co-deposition process where tin-containing oxide semiconductor and non-tin oxide semiconductor are deposited simultaneously in different regions through a single mask pattern. This merging of deposition operations reduces manufacturing complexity while maintaining the performance benefits of material differentiation.
Solution Approach 2:
The patent segments the oxide semiconductor layer into two distinct material regions (tin-containing and non-tin) within a single layer structure, allowing different materials to be formed in different areas through selective deposition during a single manufacturing process. This segmentation enables performance optimization without requiring separate processing steps for each material type.
3Measurement precision
If resolution of the display device is increased, then display quality is improved, but resistances of transistors increase
Solution Approach 1:
The patent changes the material composition parameter of the oxide semiconductor by introducing tin-containing compounds to specific transistor channel layers. This parameter change (adding tin) increases carrier concentration and mobility, thereby reducing transistor resistance to compensate for the increased resistance caused by higher display resolution requirements.
Data Source
AI summary
A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.